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Kolawa, E.

Publications and source records attributed to Kolawa, E..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

High Performance Processors for Space Environments: A Subproject of the NASA Exploration Missions Systems Directorate "Radiation Hardened Electronics for Space Environments" Technology Development Program

Implementation of challenging Exploration Systems Missions Directorate objectives and strategies can be constrained by onboard computing capabilities and power efficiencies. The Radiation Hardened Electronics for Space Environments (RHESE) High Performance Processors for Space Environments project will address this challenge by significantly advancing the sustained throughput and processing efficiency of high-per$ormance radiation-hardened processors, targeting delivery of products by the end of FY12.

Johnson, M.↗
NASA NTRS1999

Thick-Film Thermoelectric Microdevices

Miniaturized thermoelectric devices integrated into thermal management packages and low power, high voltage, electrical power source systems are of interest for a variety of space and terrestrial applications.

Thermoelectric Microdevices Energy Conversion Elec↗
NASA NTRS1999

Avionics Systems On A Chip for Space Exploration

The advanced miniaturization of all the on-board spacecraft functions into a highly integrated, modular, and reliable architecture is a major enabling technology for future deep-space and Earth orbiting science missions.

Avionics↗
NASA NTRS1994

Transmission Lines for High Frequency and High Density Packaging

We report on resistivity and chemical stability of Cr/Au bilayers deposited by sputtering on three kinds of substrates: alumina, aluminum nitride and aluminum nitride coated alumina. The insertion loss of Cr/Au microstrip lines fabricated on these three substrates was low and stable after 100 cycles in the -65 degree C to 125 degree C temperature range.

high-frequency↗
NASA NTRS1994

High Frequency Electronic Packaging Technology

Commercial and government communication, radar, and information systems face the challenge of cost and mass reduction via the application of advanced packaging technology. A majority of both government and industry support has been focused on low frequency digital electronics.

high frequency packaging commercial Materials Scie↗
NASA NTRS1994

Reaction of Ta thin film with single crystalline (001) beta-SiC

The reaction between a sputtered-deposited Ta film (320 nm thick) and a single crystalline (001) beta-SiC substrate induced by vacuum annealing at temperatures of 600-1200 C for 1 h (30 min at 1100 C) is investigated by 3 MeV He(+2) backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 C or at lower tempertures. At 900 C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000 C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of beta-SiC/TaC/carbon-stabilized Ta5Si3/alpha-Ta5Si3/Ta2C. The diffusion path at 1000 C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200 C for 1 h. At that point, the reacted layer has a latterally very uneven structure and morphology.

Chen, J. S.↗
NASA NTRS1994

The Properties of CrN/Au and Cr/CrN/Au Multilayers

Gold has been used as a conductor material in many microelectronic applications because of its low resistivity, bondability, and oxidation/corrosion resistance.

adhesion of gold diffusion barrier performance of ↗