Quantum enhanced Josephson junction field-effect transistors for logic applications
Not Available
Pan, W. (ORCID:0000000256295296)↗
Engineering topics
Klem, J. F.
Publications and source records attributed to Klem, J. F..
Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source
Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.
47 OTHER INSTRUMENTATION↗
Ground-State In-Plane Light-Holes in GaAs/AlGaAs Structures [Book Chapter]
We have performed low-temperature magnetoluminescence, far-infrared cyclotron resonance, and magneto-transport measurements on narrow (4.5 nm) GaAs/Al 0.25 Ga 0.75 As single quantum-wells. The ground state in-plane valence band was found to be light and very nonparabolic, i.e., at zone center, the valence band mass is m v ≈ 0. 1 and for E f ≈ 10 meV, m v ≈ 0.25.
36 MATERIALS SCIENCE↗
Determination of background doping polarity of unintentionally doped semiconductor layers
Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.
42 ENGINEERING↗