Engineering topics

Khanna, S. K.

Publications and source records attributed to Khanna, S. K..

At least 19 records

NASA NTRS1989

Manganese oxide microswitch for electronic memory based on neural networks

A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

Ramesham, R.↗

NASA NTRS1989

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.↗

NASA NTRS1988

Programmable synaptic chip for electronic neural networks

A binary synaptic matrix chip has been developed for electronic neural networks. The matrix chip contains a programmable 32X32 array of 'long channel' NMOSFET binary connection elements implemented in a 3-micron bulk CMOS process. Since the neurons are kept off-chip, the synaptic chip serves as a 'cascadable' building block for a multi-chip synaptic network as large as 512X512 in size. As an alternative to the programmable NMOSFET (long channel) connection elements, tailored thin film resistors are deposited, in series with FET switches, on some CMOS test chips, to obtain the weak synaptic connections. Although deposition and patterning of the resistors require additional processing steps, they promise substantial savings in silicon area. The performance of synaptic chip in a 32-neuron breadboard system in an associative memory test application is discussed.

Moopenn, A.↗

NASA NTRS1987

Electronic hardware implementations of neutral networks

This paper examines some of the present work on the development of electronic neural network hardware. In particular, the investigations currently under way at JPL on neural network hardware implementations based on custom VLSI technology, novel thin film materials, and an analog-digital hybrid architecture are reviewed. The availability of such hardware will greatly benefit and enhance the present intense research effort on the potential computational capabilities of highly parallel systems based on neural network models.

Thakoor, A. P.↗

NASA NTRS1987

All NbN tunnel junction fabrication

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

Leduc, H. G.↗

NASA NTRS1987

Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

Ramesham, R.↗

NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗

NASA NTRS1987

A neurocomputer based on an analog-digital hybrid architecture

A novel analog-digital hybrid architecture based on the utilization of high density digital random access memories for the storage of the synaptic weights of a neural network, and high speed analog hardware to perform neural computation is described. An electronic neurocomputer based on such an architecture is ideally suited for investigating the dynamics, associative recall properties, and computational capabilities of neural networks and provides significant speed improvement in comparison to conventional software based neural network simulations. As a demonstration of the feasibility of the hybrid architectural concept, a prototype breadboard hybrid neurocomputer system with 32 neurons has been designed and fabricated with off-the-shelf hardware components. The performance of the breadboard system has been tested for variety of applications including associative memory and combinatorial problem solving such as Graph Coloring, and is discussed in this paper.

Moopenn, A.↗

NASA NTRS1987

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗

NASA NTRS1986

Voltammetric studies of porous molybdenum electrodes for the alkali metal thermoelectric converter

Voltammetry of partially oxidized porous molybdenum alkali metal thermoelectric converter (AMTEC) electrodes from about 600 to 1000 K revealed a series of redox processes within the AMTEC operational voltage range which can be used to establish the electronic and ionic conductivities of these electrodes. Improved estimates of the free energies of formation of Na2Mo3O6, NaMoO2, and Na3MoO4 are obtained. Evidence is provided for the slow corrosive attack by Na2MoO4 on molybdenum. The ionic conductivity of Na2MoO4 is found to be sufficiently large at temperatures of greater than 700 K to explain the observed electrochemical phenomena in addition to the enhanced sodium transport in AMTEC electrodes below the freezing point of Na2MoO4.

Williams, R. M.↗

NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗

NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗

NASA NTRS1986

Room-Temperature Deposition of NbN Superconducting Films

Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

Thakoor, S.↗

NASA NTRS1986

Magnetron Sputtering Deposits Corrosion-Resistant Alloy

Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.

Khanna, S. K.↗

NASA NTRS1985

High T(c) superconducting NbN films deposited at room temperature

The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant factors governing the formation of the transition metal nitrides are the relative metal and nitrogen fluxes incident on the substrate and the background argon pressure (which dictates the overall reactive sites and residence times for nitrogen).

Thakoor, S.↗

NASA NTRS1985

Thin-film chemical sensors based on electron tunneling

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Khanna, S. K.↗

NASA NTRS1985

Refractory amorphous metallic (W/0.6/ Re/0.4/)76B24 coatings on steel substrates

Refractory metallic coatings of (W/0.6/ Re/0.4/)76B24 (WReB) have been deposited onto glass, quartz, and heat-treated AISI 52100 bearing steel substrates by dc magnetron sputtering. As-deposited WReB films are amorphous, as shown by their diffuse X-ray diffraction patterns; chemically homogeneous, according to secondary ion mass spectrometry (SIMS) analysis; and they exhibit a very high (approximately 1000 C) crystallization temperature. Adhesion strength of these coatings on heat-treated AISI 52100 steel is in excess of approximately 20,000 psi and they possess high microhardness (approximately 2400 HV50). Unlubricated wear resistance of such hard and adherent amorphous metallic coatings on AISI 52100 steel is studied using the pin-on-disc method under various loading conditions. Amorphous metallic WReB coatings, about 4 microns thick, exhibit an improvement of more than two and a half orders of magnitude in the unlubricated wear resistance over that of the uncoated AISI 52100 steel.

Thakoor, A. P.↗

NASA NTRS1985

Magnetron-Sputtered Amorphous Metallic Coatings

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Thakoor, A. P.↗