Khan, N. | Engineering Papers

DOE OSTI2024

Capping Effects on Spin and Charge Excitations in Parent and Superconducting Nd 1-x Sr x⁢ NiO 2

Superconductivity in infinite layer nickelates Nd 1-x⁢ Sr x NiO 2 has so far been achieved only in thin films, raising questions on the role of substrates and interfaces. Given the challenges associated with their synthesis it is imperative to identify their intrinsic properties. We use resonant inelastic x-ray scattering to investigate the influence of the SrTiO 3 capping layer on the excitations of Nd 1-x ⁢Sr x⁢ NiO 2 (x =0 and 0.2). Spin excitations are observed in parent and 20% doped Nd 1-x Sr x ⁢NiO 2 regardless of capping, proving that magnetism is intrinsic to infinite-layer nickelates and appears in a significant fraction of their phase diagram. In parent and superconducting Nd 1-x Sr x ⁢NiO 2 , the spin excitations are slightly hardened in capped samples compared to the noncapped ones. Additionally, a weaker Ni-Nd charge transfer peak at ~0.6 eV suggests that the hybridization between Ni 3⁢d and Nd 5⁢d orbitals is reduced in capped samples. In conclusion, from our data, capping induces only minimal differences in Nd 1-x Sr x NiO 2 and we phenomenologically discuss these differences based on the reconstruction of the SrTiO 3 -NdNiO 2 interface and other mechanisms such as crystalline disorder.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Boron Nitride Solid-State Neutron Detectors

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗