Efficient Electronic Tunneling Governs Transport in Conducting Polymer-Insulator Blends
Not Available
Charge transport↗
Engineering topics
Keene, Scott T.
Publications and source records attributed to Keene, Scott T..
Ion Pair Uptake in Ion Gel Devices Based on Organic Mixed Ionic–Electronic Conductors
Abstract In organic mixed ionic–electronic conductors (OMIECs), it is critical to understand the motion of ions in the electrolyte and OMIEC. Generally, the focus is on the movement of net charge during gating, and the motion of neutral anion–cation pairs is seldom considered. Uptake of mobile ion pairs by the semiconductor before electrochemical gating (passive uptake) can be advantageous as this can improve device speed, and both ions can participate in charge compensation during gating. Here, such passive ion pair uptake in high‐speed solid‐state devices is demonstrated using an ion gel electrolyte. This is compared to a polymerized ionic liquid (PIL) electrolyte to understand how ion pair uptake affects device characteristics. Using X‐ray photoelectron spectroscopy, the passive uptake of ion pairs from the ion gel into the OMIEC is detected, whereas no uptake is observed with a PIL electrolyte. This is corroborated by X‐ray scattering, which reveals morphological changes to the OMIEC from the uptake of ion pairs. With in situ Raman, a reorganization of both anions and cations is then observed during gating. Finally, the speed and retention of OMIEC‐based neuromorphic devices are tuned by controlling the freedom of charge motion in the electrolyte.
Quill, Tyler J.↗
Enhancement‐Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De‐Doping
Abstract Organic electrochemical transistors (OECTs) show great promise for flexible, low‐cost, and low‐voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de‐dope PEDOT:PSS using commercially available amine‐based molecular de‐dopants to achieve stable enhancement‐mode OECTs is presented. The enhancement‐mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm 2 V −1 s −1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de‐dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de‐doping on the microstructure of the spin‐cast PEDOT:PSS films is investigated.
Keene, Scott T.↗
Redox transistors for neuromorphic computing
Efficiency bottlenecks inherent to conventional computing in executing neural algorithms have spurred the development of novel devices capable of “in-memory” computing. Commonly known as “memristors,” a variety of device concepts including conducting bridge, vacancy filament, phase change, and other types have been proposed as promising elements in artificial neural networks for executing inference and learning algorithms. In this article, we review the recent advances in memristor technology for neuromorphic computing and discuss strategies for addressing the most significant performance challenges, including nonlinearity, high read/write currents, and endurance. As an alternative to two-terminal memristors, we introduce the three-terminal electrochemical memory based on the redox transistor (RT), which uses a gate to tune the redox state of the channel. Decoupling the “read” and “write” operations using a third terminal and storage of information as a charge-compensated redox reaction in the bulk of the transistor enables high-density information storage. These properties enable low-energy operation without compromising analog performance and nonvolatility. Finally, we discuss the RT operating mechanisms using organic and inorganic materials, approaches for array integration, and prospects for achieving the device density and switching speeds necessary to make electrochemical memory competitive with established digital technology.
97 MATHEMATICS AND COMPUTING↗