Engineering topics

Keavney, C. J.

Publications and source records attributed to Keavney, C. J..

9 records

NASA NTRS1989

Fabrication of n(+)/p InP solar cells on silicon substrates

InP films were grown by MOCVD on Si GaAs substrates (as well as on InP substrates, included as controls), and were used to fabricate solar cells, using the Spitzer et al. (1987) technique. Contact to the substrate was made with Al-Ti-Pd-Ag to the Si wafers and with Au-Zn alloy to the GaAs wafers, while contract to the front was made with Cr-Au-Ag. Air mass zero efficiencies were found to be 7.1 percent for Si-substrate cells and 9.4 percent for GaAs-substrate cells.

Keavney, C. J.↗

NASA NTRS1989

High-efficiency heteroepitaxial solar cells for space power applications

The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported. Efficiencies of up to 24.5 percent (170X, AM0) and 21.7 percent (1X, AM0) have been achieved with homoepitaxial GaAs p/n cells. This one-sun AM0 efficiency value is believed to be the highest reported to date. Tandem solar cells utilizing GaAs-on-Ge structures have been fabricated and shown to have efficiencies up to 21.3 percent (1X, AM0), and a GaAs-on-Si cell at 15.2 percent (1X, AM0) is reported. Homoepitaxial n/p InP cells with an efficiency of 18.8 percent (1X, AM0) are also reported. The fabrication of heteroepitaxial InP solar cells with one-sun AM0 efficiency values of 9.4 percent (on GaAs) and 7.2 percent (on Si) is described.

Vernon, S. M.↗

NASA NTRS1987

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

The fabrication of highly efficient indium phosphide solar cells by metalorganic chemical vapor deposition is reported. Since InP can be annealed at temperatures at low as approximately 100 C and the annealing occurs under solar illumination itself, this accomplishment is relevant to space power systems. A total area air mass zero efficiency of 17.9 percent and an air mass 1.5 efficiency of 20.4 percent are reported. Electrical characterization identifying loss mechanisms is made, and a shallow homojunction design is discussed along with possible improvements.

Spitzer, M. B.↗

NASA NTRS1987

Status of indium phosphide solar cell development at Spire

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Spitzer, M. B.↗

NASA NTRS1987

Performance improvements in silicon flat-plate cells and modules

This paper reports the development of a flat-plate module based on highly efficient ion-implanted silicon solar cells. The cells developed in this work are 53 sq cm in area and have exhibited AM 1.5 efficiencies of over 18 percent. The use of back surface reflectors to reduce module operating temperature is discussed. A comparison of various approaches to cell design is made, and module test data for these designs are presented. A comparison of float zone and Czochralski silicon is made. Module efficiency of over 15 percent (at 25 C) is reported.

Spitzer, M. B.↗

NASA NTRS1986

Theoretical and experimental considerations for high silicon solar cell performance

This paper reviews ongoing research aimed at the attainment of highly efficient silicon solar cells. The importance of low-recombination highly-doped n(+) and p(+) regions and the manner in which such regions are fabricated are discussed. Theoretical light-trapping considerations are combined with experimental reflectance data to show that high quantum efficiency may be obtained from thin (100-micron) cells. The principal finding of this work is that thin solar cells with conversion efficiencies of over 20 percent may be fabricated if recombination at the front and back metal/silicon interfaces is reduced. Large-area cells (53 sq cm) with an efficiency of 18 percent are reported.

Spitzer, M. B.↗

NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗

NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗

NASA NTRS1985

Further research on high open circuit voltage in silicon solar cells

The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained.

Spitzer, M. B.↗