Engineering topics
Kayali, Sammy
Publications and source records attributed to Kayali, Sammy.
International Challenges of GRACE Follow-On
The Gravity Recovery and Climate Experiment - Follow-On (GRACE-FO) Mission is a NASA directed mission to continue the goals of the original GRACE mission and provide continuity for the GRACE data set. The GRACE-FO mission is the result of an international cooperation to develop a concept and approach that minimizes cost and risk and maximizes the probability of success through limited changes to the original GRACE system design. The result is a system architecture in which maintenance of heritage is paramount, including heritage derived through the partnership with the German Research Centre for Geosciences (GFZ) in Germany. As a secondary goal, GRACE-FO will carry a Laser Ranging Interferometer (LRI) as a technology demonstration, which will provide laser interferometry measurements of inter-satellite range, complementary to the K/Ka-Band microwave link to demonstrate laser-ranging technology in support of future GRACE-like missions. Another secondary objective is the continuation of GRACE radio occultation measurements.
A Statistical Approach to Characterizing the Reliability of Systems Utilizing HBT Devices
This paper presents a statistical approach to characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the HBT individual devices, along with the analysis on the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.
Compound Semiconductor Devices for Space Applications
Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.
NASA Electronic Parts and Packaging Program
NEPP program objectives are to: (1) Access the reliability of newly available electronic parts and packaging technologies for usage on NASA projects through validations, assessments, and characterizations, and the development of test methods/tools; (2)Expedite infusion paths for advanced (emerging) electronic parts and packaging technologies by evaluations of readiness for manufacturability and project usage consideration; (3) Provide NASA projects with technology selection, application, and validation guidelines for electronic parts and packaging hardware and processes; nd (4) Retain and disseminate electronic parts and packaging quality assurance, reliability validations, tools, and availability information to the NASA community.
Hydrogen Effects on GaAs Device Reliability
It has been observed that GaAs devices mounted in hermetically sealed packages, and exposed to burn-in and lifetest temperatures as low as 125 C, exhibit performance degradation in both RF and DC characteristics after relatively short periods of test time (500 hours). This paper will provide a discussion and summary of the general understanding of the failure mechanisms associated with this.
Hydrogen Effects on GaAs, Status and Progress
It has been observed that GaAs devices in hermetically sealed packages when exposed to temperatures as low as 125oC can exhibit unacceptable degradation in both RF and DC characteristics. The source of the problem was found to be hydrogen that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics. Most of the data indicates the onslaught of the problem to occur after 500 hours at 125oC. This onslaught has been observed to be dependent on the thickness and processing conditions of the passivation layer, the sealing environment, and the amount of Pt or Pd in the gate structure of the device.