Engineering topics

Katz, Rich

Publications and source records attributed to Katz, Rich.

4 records

NASA NTRS2017

Environmental Effects on Data Retention in Flash Cells

Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Antifuse technology, prevalent in non-volatile field programmable gate arrays (FPGAs), will eventually be phased out as new devices have not been developed for approximately a decade. The reliance on flash technology presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. This paper will present the results of our on-going tests: long-term storage at 150 C for a small population of devices, neutron radiation exposure, electrostatic discharge (ESD) testing, and the trends of large populations (over 300 devices for each condition) exposed to three difference temperatures: 25 C, 125 C, and 150 C.

Flash↗

NASA NTRS2016

An Evaluation of Flash Cells Used in Critical Applications

Due to the common use of Flash technology in many commercial and industrial Programmable Logic Devices (PLDs) such as FPGAs and mixed-signal microcontrollers, flash technology is being utilized in fuzed munition applications. This presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. Initial test results based on a study of charge loss in flash cells in an FPGA device is presented. Statistical data taken from a small sample set indicates quantifiable charge loss for devices stored at both room temperature and 150 C. Initial evaluation of the distribution of threshold voltage in a large sample set (800 devices) is presented. The magnitude of charge loss from exposure to electrostatic discharge and electromagnetic fields is measured and presented. Simulated data (and measured data as available) resultant from harsh-environment testing (neutron, heavy ion, EMP) is presented.

Data Retention↗

NASA NTRS2002

Radiation Tolerant Antifuse FPGA

The total dose performance of the antifuse FPGA for space applications is summarized. Optimization of the radiation tolerance in the fabless model is the main theme. Mechanisms to explain the variation in different products are discussed.

Wang, Jih-Jong↗

NASA NTRS2001

New Instrumentation, Patterns and Their Effects on TID Testing of Antifuse-Based FPGAs

TID-induced leakage currents for some families of antifuse-based Field Programmable Gate Array (FPGA) devices are significantly affected by the state of bias of a device's internal nodes; proper consideration of this effect is essential for proper testing of these devices and interpretation of test results. Variations in TID performance based on utilization of different internal logic modules for implementing identical circuits may be utilized by circuit designers for improvement in TID performance by tailoring the placement algorithm. Propagation delays are significantly affected by TID-induced damage for the devices of 54SX32S family.

Kleyner, Igor↗