Engineering topics
Publications and source records attributed to Katti, R. R..
Data storage systems based on vertical Bloch lines have been fabricated in 2 um bubble garnet material. The input/output line was fully operational, and experiments in reading and writing showed an encouraging correlation between input and output.
This viewgraph presentation describes the magnetic device design and evaluation capabilities at the Center for Space Microelectronics Technology at the Jet Propulsion Laboratory. The capabilities start with supercomputers for design and simulation. Circuits can be examined via electrical flow and microscopic examination. These capabilities are useful for developing new devices, particularly for space applications.
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Overview/ Technology description review: Functional goals. Performance ranges. VBL operability review.
Bias field stability ranges were measured and numerically simulated for magnetic domains ingarnets stabilized by partially grooved rectangular and ring grooves. Simulation results agreefavorably with experimental results when finite slope effects of the groove walls are included. Asbias fields increase, rectangular and ring domains both destabilize through stripe head recession. Asbias fields decrease, destabilization in rectangular domains occurs by runout, while destabilization inring domains occurs by midstripe domain buckling. While ring domains are stable at lower biasfields than rectangular domains, bias field stability ranges are approximately equal. Hence, for thesame partial grooving depth, rectangular domains are preferred because they offer higher storagedensity potential in Vertical Block Line (VBL) storage arrays as long as bit propagation margins atstripe ends are sufficient.
No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.
Long, partial rectangular grooves have been made to reside below the stripe-confinement groove on a garnet surface, in order to stabilize minor loop stripes in a vertical Bloch-line memory. The test chip contained, in addition to either 10 or 20 minor-loop grooves, 10 read/write gate grooves and a major line groove; both 10 and 20 micron groove periods were tested. As the bias field was gradually decreased, bubbles began to stripe out. These stripes were stable at bias fields in the 70-80 Oe range. When stripes escaped from the groove, the even occurred from the end which does not face a read/write gate groove.
An experimental and numerical study is conducted of the operation of a major line in a vertical Bloch-line memory that employs a partial garnet-grooving architecture and contains (1) a bubble generator; (2) a bubble-propagation track; (3) a bubble-expander for detection; and (4) a bubble annihilator. The bubble expander is a modification of the propagation track; the meandering conductor and groove width were gradually increased to stretch the bubble into a stripe. The numerical model employed encompasses the garnet-grooving effect. Agreement is obtained between exparimental and simulation results.
Vertical Bloch Line (VBL) Memory is a recently conceived, integrated, solid state, block access, VLSI memory which offers the potential of 1 Gbit/sq cm areal storage density, data rates of hundreds of megabits/sec, and submillisecond average access time simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of BVL pairs are used to store binary information. At present, efforts are being directed at developing a single chip memory using 25 Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. The current design architecture, functional elements, and supercomputer simulation results are described which are used to assist the design process.
A study of dc modulation noise as a function of magnetic layer thickness has been conducted for plated longitudinal low-noise Co-alloy disk media with a range of 900 to 1100 Oe. The noise, produced by the application of a reverse longitudinal dc field to a uniformly magnetized disk, supplies data regarding the uniformity of the disk. A spectrum analyzer measures the noise by means of electronic detection, and noise spectra and autocorrelation functions calculated with a model are compared to the experimental results. The model correlates with experimental data to more than 0.99. The maximum distance between effective transitions diminishes from 2.8 microns to 1 micron when the thickness of the magnetic layer is increased from 25 nm to 60 nm. The maximum average transition amplitude is found to be independent of thickness, and is bounded by 0.001 of the saturation magnetization.