Engineering PapersSearch

Engineering topics

Kapur, V. K.

Publications and source records attributed to Kapur, V. K..

Status of flexible CIS research at ISET

Polycrystalline thin film solar cells fabricated on light-weight, flexible substrates are very attractive for space applications. In this work CulnSe2 (CIS) based thin film devices were processed on metallic foil substrates using the selenization technique. CIS deposition method involved reaction of electron-bean evaporated Cu-In precursor layers with a selenizing atmosphere at around 400 C. Several metallic foils such as Mo, Ti, Al, Ni, and Cu were evaluated as possible substrates for these devices. Solar cells with AM1.5 efficiencies of 9.0-9.34 percent and good mechanical integrity were demonstrated on Mo and Ti foils. Monolithic integration of these devices was also demonstrated up to 4 in x 4 in size.

Basol, B. M.

Flexible polycrystalline thin-film photovoltaics for space applications

Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

Armstrong, J. H.

Flexible copper-indium-diselenide films and devices for space applications

With the ever increasing demands on space power systems, it is imperative that low cost, lightweight, reliable photovoltaics be developed. One avenue of pursuit for future space power applications is the use of low cost, lightweight flexible PV cells and arrays. Most work in this area assumes the use of flexible amorphous silicon (a-Si), despite its inherent instability and low efficiencies. However, polycrystalline thin film PV such as copper-indium-diselenide (CIS) are inherently more stable and exhibit better performance than a-Si. Furthermore, preliminary data indicate that CIS also offers exciting properties with respect to space applications. However, CIS has only heretofore only produced on rigid substrates. The implications of flexible CIS upon present and future space power platforms was explored. Results indicate that space qualified CIS can dramatically reduce the cost of PV, and in most cases, can be substituted for silicon (Si) based on end-of-life (EOL) estimations. Furthermore, where cost is a prime consideration, CIS can become cost effective than gallium arsenide (GaAs) in some applications. Second, investigations into thin film deposition on flexible substrates were made, and data from these tests indicate that fabrication of flexible CIS devices is feasible. Finally, data is also presented on preliminary TCO/CdS/CuInSe2/Mo devices.

Armstrong, J. H.

Two-Temperature-Zone Silicon Reactor

When high purity silicon is synthesized by reduction of silicon tetrafluoride by sodium, very-fast highly exothermic reaction takes place. Controlled reaction is proposed in which SiF4-pressurized vertical reactor operates with two temperature zones. Liquid sodium feeds from nozzle at top of rector without reacting with SiF4. When sodium reaches higher temperature region at bottom, reaction takes place immediately.

Sanjurjo, A.

Separating Silicon and Sodium Fluoride by Melting

Silion is withdrawn from bottom of crucible, once two immiscible liquid stages form, in quasi-continuous method of separating silicon from other reaction products. Process is periodically halted to remove accumulated buildup of salts.

Nanis, L.

Novel duplex vapor-electrochemical method for silicon solar cells

A process was developed for the economic production of high purity Si from inexpensive reactants, based on the Na reduction of SiF4 gas. The products of reaction (NaF, Si) are separated by either aqueous leaching or by direct melting of the NaF-Si product mixture. Impurities known to degrade solar cell performance are all present at sufficiently low concentrations so that melt solidification (e.g., Czochralski) will provide a silicon material suitable for solar cells.

Nanis, L.

Low-cost high purity production

Economical process produces high-purity silicon crystals suitable for use in solar cells. Reaction is strongly exothermic and can be initiated at relatively low temperature, making it potentially suitable for development into low-cost commercial process. Important advantages include exothermic character and comparatively low process temperatures. These could lead to significant savings in equipment and energy costs.

Kapur, V. K.

Novel duplex vapor-electrochemical method for silicon solar cells

Silicon obtained by the SiF4-Na reaction was analyzed by spark source mass spectrometry (SSMS). Silicon samples prepared from induction melted powder were evaluated for electrical properties using four point probe conductivity and thermoelectric methods. SiF4-Na reaction under P sub SiF4 greater than 1 atmosphere. The amount of silicon produced was increased from 25 g per batch (in the glass reactor) to greater than 70 g per batch in the stainless steel reactor. The study of the effects of reaction variables such as P sub SiF4 and maximum temperature attained on the particle size of silicon powder showed that the silicon particle size tends to grow larger with increasing pressure of the SiF4 gas in the reaction system.

Kapur, V. K.

Novel duplex vapor-electrochemical method for silicon solar cells

Silicon was produced by alternate pulse feeding of the reactants SiF4 gas and liquid sodium. The average temperature in the reactor could be controlled, by regulating the amount of reactant in each pulse. Silicon tetrafluoride gas was analyzed by mass spectrometry to determine the nature and amount of contained volatile impurities which included silicon oxyfluorides, sulfur oxyfluorides, and sulfur dioxide. Sodium metal was analyzed by emission spectrography, and it was found to contain only calcium and copper as impurities.

Kapur, V. K.