Engineering topics

Kanté, Boubacar

Publications and source records attributed to Kanté, Boubacar.

3 records

DOE OSTI2024

BerkSEL: A scale-invariant laser beyond the Schawlow-Townes two-mirror strategy

I argue that a surface emitting laser that remains single mode irrespective of its size, a scale-invariant laser, should of necessity also waste light at the edge. This is a fundamental departure from the Schawlow-Townes two-mirror strategy that keeps light away from mirrors and edges to preserve gain and minimize loss. The strategy was implemented in the recent discovery of the Berkeley Surface Emitting Laser (BerkSEL).

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Disordered topological graphs enhancing nonlinear phenomena

Complex networks play a fundamental role in understanding phenomena from the collective behavior of spins, neural networks, and power grids to the spread of diseases. Topological phenomena in such networks have recently been exploited to preserve the response of systems in the presence of disorder. We propose and demonstrate topological structurally disordered systems with a modal structure that enhances nonlinear phenomena in the topological channels by inhibiting the ultrafast leakage of energy from edge modes to bulk modes. We present the construction of the graph and show that its dynamics enhances the topologically protected photon pair generation rate by an order of magnitude. Disordered nonlinear topological graphs will enable advanced quantum interconnects, efficient nonlinear sources, and light-based information processing for artificial intelligence.

42 ENGINEERING↗

DOE OSTI2023

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.

42 ENGINEERING↗