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Joshi, Pooran

Publications and source records attributed to Joshi, Pooran.

3-D Printed Electro-Magnetic Objects for THz Communications

Advanced materials and manufacturing techniques will pave the path towards high quality electro-magnetic circuits that operate up through THz and into optics regime. Digital additive manufacturing (AM) techniques offer game-changing potential for large scale manufacturing of Radio-frequency (RF) circuits and system in custom 2D/3D geometries. The technical collaboration will explore the design flexibility and product customization capabilities of additive manufacturing techniques to process magnetic materials in custom 3D geometries with tailored dielectric properties and frequency response characteristics. Transformation of an RF circuit design idea into a 3D printed system using additive manufacturing techniques will bring together the elements of advanced materials, additive integration, and low-cost manufacturing for future advanced wireless communication systems.

36 MATERIALS SCIENCE↗

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.

42 ENGINEERING↗