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Jones, Jacob L.

Publications and source records attributed to Jones, Jacob L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films

The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO 2 films is investigated. HfO 2 films were sputtered from a hafnium metal target in an Ar/O 2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse width is shown to affect the ion-to-neutral ratio in the depositing species with the shortest pulse durations leading to the highest ion fraction. In situ x-ray diffraction measurements during crystallization demonstrate that the HiPIMS pulse width impacts nucleation and phase formation, with an intermediate pulse width of 110 μ s stabilizing the ferroelectric phase over the widest temperature range. Although the pulse width impacts the grain size with the lowest pulse width resulting in the largest grain size, the grain size does not strongly correlate with the phase content or ferroelectric behavior in these films. In conclusion, these results suggest that precise control over the energetics of the depositing species may be beneficial for forming the ferroelectric phase in this material.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Circumventing thermodynamics to synthesize highly metastable perovskites: nano eggshells of SnHfO 3

Sn(II)-based perovskite oxides, being the subject of longstanding theoretical interest for the past two decades, have been synthesized for the first time in the form of nano eggshell particle morphologies. All past reported synthetic attempts have been unsuccessful owing to their metastable nature, i.e., by their thermodynamic instability towards decomposition to their constituent oxides. A new approach was discovered that finally provides an effective solution to surmounting this intractable synthetic barrier and which can be the key to unlocking the door to many other predicted metastable oxides. A low-melting KSn 2 Cl 5 salt was utilized to achieve a soft topotactic exchange of Sn(II) cations into a Ba-containing perovskite, i.e., BaHfO 3 with particle sizes of ~350 nm, at a low reaction temperature of 200 °C. The resulting particles exhibit nanoshell-over-nanoshell morphologies, i.e., with SnHfO 3 forming as ~20 nm thick shells over the surfaces of the BaHfO 3 eggshell particles. Formation of the metastable SnHfO 3 is found to be thermodynamically driven by the co-production of the highly stable BaCl 2 and KCl side products. Despite this, total energy calculations show that Sn(II) distorts from the A-site asymmetrically and randomly and the interdiffusion has a negligible impact on the energy of the system (i.e., layered vs. solid solution). Additionally, nano eggshell particle morphologies of BaHfO 3 were found to yield highly pure SnHfO 3 for the first time, thus circumventing the intrinsic ion-diffusion limits occurring at this low reaction temperature. In summary, these results demonstrate that the metastability of many theoretically predicted Sn(II)-perovskites can be overcome by leveraging the high cohesive energies of the reactants, the exothermic formation of a stable salt side product, and a shortened diffusion pathway for the Sn(II) cations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Many routes to ferroelectric HfO 2 : A review of current deposition methods

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2 ), researchers are still intensely fascinated by this material system and the promise it holds for future applications. A wide variety of deposition methods have been deployed to create ferroelectric HfO 2 thin films such as atomic layer deposition, chemical solution deposition, and physical vapor deposition methods such as sputtering and pulsed laser deposition. Process and design parameters such as deposition temperature, precursor choice, target source, vacuum level, reactive gases, substrate strain, and many others are often integral in stabilizing the polar orthorhombic phase and ferroelectricity. We examine processing parameters across four main different deposition methods and their effect on film microstructure, phase evolution, defect concentration, and resultant electrical properties. The goal of this review is to integrate the process knowledge collected over the past 10 years in the field of ferroelectric HfO 2 into a single comprehensive guide for the design of future HfO 2 -based ferroelectric materials and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Liquid–Solid Mixtures of Ga Metal Infused with Cu Microparticles and Nanoparticles for Microscale and Nanoscale Patterning of Solid Metals at Room Temperature

This paper demonstrates and characterizes a simple ink for nanopatterning of solid metallic structures under ambient conditions by taking advantage of the low melting point of gallium and its affinity to form intermetallics with other metals. Bare copper micro- and nanoparticles readily mix with liquid gallium near room temperature to form a paste that ultimately amalgamates into a dense solid when mixed at the appropriate concentration ratios. The paste has sufficient shelf life that can be extruded from a nozzle at modest temperatures to form solid three-dimensional (3D) shapes. Additionally, the paste can be molded at room temperature to replicate feature sizes ranging from a few millimeters down to hundreds of nanometers. In situ X-ray diffraction (XRD) and thermo-mechanical analysis (TMA) data show gallium and copper readily interdiffuse to form the thermodynamically expected intermetallic phase. We describe the capabilities and limitations of a simple way to pattern solid metals in an additive fashion (syringe-based extrusion) and with high resolution (molding) at or near room temperature. Here, the use of a paste that solidifies provides a novel route for 3D printing of solid metals at ambient temperatures as well as the creation of micro- and nanostructured metallic surfaces that may be useful for optics, non-wetting surfaces, or electronic microcomponents.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effect of alloying BaTiO 3 with BiZn 1/2 Ti 1/2 O 3 on polarization reversal

Changes in the polarization state of ferroelectric materials are mediated through the motion of planar defects such as domain walls. The interplay between the two processes that enable the inversion of the macroscopic polarization in ferroelectric materials, non-180° (domain reorientation) and 180° (domain reversal), is not well understood. In this work, time-resolved x-ray diffraction was carried out during the application of an external electric field to investigate the dynamic electric-field response mechanisms of BaTiO 3 (BT) and BiZn 1/2 Ti 1/2 O 3 (BZT)-modified BT (0.94BT-0.06BZT). These data evidence that the incorporation of BZT into BT fundamentally alters what processes are activated to reorient the polarization by 180°. Polarization reversal in BT is achieved through direct inversion of spontaneous dipoles. However, the addition of BZT into BT promotes a two-step polarization reversal process (i.e., two consecutive non-180° reorientation events).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Algorithms in Diffraction Profile Analysis

This chapter introduces several approaches to crystallographic structure refinement from diffraction profile data including the Rietveld method, global optimization methods, and Bayesian modeling. First, the Rietveld method and related nonlinear least squares approaches to analyzing diffraction profiles are briefly discussed. We then review the most common algorithms within global optimization as alternative methods of structure solution: grid search, simulated annealing, and genetic algorithms. As the Rietveld method is the standard tool for analyzing diffraction profile data, we catalogue its challenges and limitations. A Bayesian approach to diffraction profile analysis is presented as an alternative, along with several sampling algorithms including Gibbs sampling, variants of Metropolis sampling, Hamiltonian Monte Carlo, and approximate Bayesian computing. These sampling algorithms are applied to the fitting of a neutron diffraction profile from a National Institute of Standards and Technology silicon standard reference material, and their results are compared.

Singh, Susheela↗