Engineering topics
Jia, Zhubing
Publications and source records attributed to Jia, Zhubing.
Quantum simulation of conical intersections using trapped ions
Conical intersections often control the reaction products of photochemical processes and occur when two electronic potential energy surfaces intersect. Theory predicts that the conical intersection will result in a geometric phase for a wavepacket on the ground potential energy surface, and although conical intersections have been observed experimentally, the geometric phase has not been directly observed in a molecular system. Herein we use a trapped atomic ion system to perform a quantum simulation of a conical intersection. The ion’s internal state serves as the electronic state, and the motion of the atomic nuclei is encoded into the motion of the ions. The simulated electronic potential is constructed by applying state-dependent optical forces to the ion. We experimentally observe a clear manifestation of the geometric phase using adiabatic state preparation followed by motional state measurement. Our experiment shows the advantage of combining spin and motion degrees for quantum simulation of chemical reactions.
Angle-robust two-qubit gates in a linear ion crystal
In trapped-ion quantum computers, two-qubit entangling gates are generated by applying spin-dependent force which uses phonons to mediate interaction between the internal states of the ions. To maintain high-fidelity two-qubit gates under fluctuating experimental parameters, robust pulse-design methods are applied to remove the residual spin-motion entanglement in the presence of motional mode-frequency drifts. Here we propose an improved pulse-design method that also guarantees the robustness of the two-qubit rotation angle against uniform mode-frequency drifts by concatenating pulses with opposite sensitivity of the angle to mode-frequency drifts. Here we experimentally verify significantly improved robustness of the rotation angle against uniform mode-frequency drifts, as well as observe an improvement in gate fidelity from 97.84(10)% to 98.11(11)%, compared to a single frequency-modulated pulse.