Engineering topics
Publications and source records attributed to Jhabvala, M..
The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).
The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.
Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature Ill-V material technology. The employment of the corrugation structure further advances the technology by providing a simple, yet efficient light-coupling scheme. A C-QWIP enjoys the same flexibility as a detector with intrinsic normal incident absorption. In this paper, we will discuss the utilities of C-QWIPs in different applications, including two-color detection and polarization-sensitive detection. Besides practical applications, C-QWIPs are also useful in detector characterization. They can be used for measuring the absorption coefficient of light propagating parallel to the layers under bias and providing information on the energy resolved photoconductive gain. These two quantities have never been measured before. Based on the corrugation design, we have made several modifications that further improve the detector sensitivity without increasing its complexity. Other than the C-QWIP structure, we also continue searching for other sensitive detector architectures. In a quantum grid infrared photodetector, 3-dimensional electron confinement can be achieved, with which the detector is able to absorb light in all directions. At the same time, the photoconductive gain can also be improved. We further improve the design using a blazed structure. All the experimental results are supported by a rigorous electromagnetic modal transmission-line theory developed especially for these types of structures. Preliminary thermal imaging using C-QWIP FPAs validates the advantages of the present approach.
We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 mm thick, low temperature process parameters in the fabrication of these silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power.
Microchannel plate based detectors with cross delay line image readout have been rapidly implemented for the SUMER and UVCS instruments aboard the Solar Orbiting Heliospheric Observatory (SOHO) mission to be launched in July 1995. In October 1993 a fast track program to build and characterize detectors and detector control electronics was initiated. We present the detector system design for the SOHO UVCS and SUMER detector programs, and results from the detector test program. Two deliverable detectors have been built at this point, a demonstration model for UVCS, and the flight Ly alpha detector for UVCS, both of which are to be delivered in the next few weeks. Test results have also been obtained with one other demonstration detector system. The detector format is 26mm x 9mm, with 1024 x 360 digitized pixels, using a low resistance Z stack of microchannel plates (MCP's) and a multilayer cross delay line anode (XDL). This configuration provides gains of approximately 2 x 10(exp 7) with good pulse height distributions (less than 50% FWHM) under uniform flood illumination, and background levels typical for this configuration (approximately 0.6 event cm (exp -2)sec(exp -1)). Local counting rates up to about 400 events/pixel/sec have been achieved with no degradation of the MCP gain. The detector and event encoding electronics achieves about 25 millimeter FVHM with good linearity (plus or minus approximately 1 pixel) and is stable to high global counting rates (greater than 4 x 10(exp 5) events sec(exp -1)). Flat field images are dominated by MCP fixed pattern noise and are stable, but the MCP multifiber modulation usually expected is uncharacteristically absent. The detector and electronics have also successfully passed both thermal vacuum and vibration tests.
A visual display was developed for people with substantial hearing loss in either one or both ears. The system consists of three discreet units; an eyeglass assembly for the visual display of the origin or direction of sounds; a stationary general purpose noise alarm; and a noise seeker wand.
Hearing-aid device indicates visually whether sound is coming from left, right, back, or front. Device intended to assist individuals who are deaf in at least one ear and unable to discern naturally directions to sources of sound. Device promotes safety in street traffic, on loading docks, and in presence of sirens, alarms, and other warning sounds. Quadraphonic version of device built into pair of eyeglasses and binaural version built into visor.
Microscopic devices consume less power, run hotter, and are more reliable. Simple, compact, lightweight, rapidly-responding reference sources of broadband infrared radiation made available by integrated-circuit technology. Intended primarily for use in calibration of remote-sensing infrared instruments, devices eventually replace conventional infrared sources. New devices also replace present generation of miniature infrared sources. Self-passivating nature of poly-crystalline silicon adds to reliability of devices. Maximum operating temperature is 1,000 K, and power dissipation is only one-fourth that of prior devices.
By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted
A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.