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Jhabvala, M. D.

Publications and source records attributed to Jhabvala, M. D..

The Infrared Sensor Suite for SnowEx 2017

SnowEx is a winter airborne and field campaign designed to measure snow-water equivalent in forested landscapes. A major focus of Year 1 (2016-17) of NASA's SnowEx campaign will be an extensive field program involving dozens of participants from U.S. government agencies and from many universities and institutions, both domestic and foreign. Along with other instruments, two infrared (IR) sensors will be flown on a Naval Research Laboratory P-3 aircraft. Surface temperature is a critical input to hydrologic models and will be measured during the SnowEx mission. A Quantum Well Infrared Photodetector (QWIP) IR imaging camera system will be flown along with a KT-15 remote thermometer to aid in the calibration of the IR image data. Together, these instruments will measure surface temperature of snow and ice targets to an expected accuracy of less than 1C.

SnowEx

Development and Operation of the Microshutter Array System

The microshutter array (MSA) is a key component in the James Webb Space Telescope Near Infrared Spectrometer (NIRSpec) instrument. The James Webb Space Telescope is the next generation of a space-borne astronomy platform that is scheduled to be launched in 2013. However, in order to effectively operate the array and meet the severe operational requirements associated with a space flight mission has placed enormous constraints on the microshutter array subsystem. This paper will present an overview and description of the entire microshutter subsystem including the microshutter array, the hybridized array assembly, the integrated CMOS electronics, mechanical mounting module and the test methodology and performance of the fully assembled microshutter subsystem. The NIRSpec is a European Space Agency (ESA) instrument requiring four fully assembled microshutter arrays, or quads, which are independently addressed to allow for the imaging of selected celestial objects onto the two 4 mega pixel IR detectors. Each microshutter array must have no more than approx.8 shutters which are failed in the open mode (depending on how many are failed closed) out of the 62,415 (365x171) total number of shutters per array. The driving science requirement is to be able to select up to 100 objects at a time to be spectrally imaged at the focal plane. The spectrum is dispersed in the direction of the 171 shutters so if there is an unwanted open shutter in that row the light from an object passing through that failed open shutter will corrupt the spectrum from the intended object.

Jhabvala, M. D.

Cryogenic Characterization and Testing of Magnetically-Actuated Microshutter Arrays for the James Webb Space Telescope

Two-dimensional MEMS microshutter arrays (MSA) have been fabricated at the NASA Goddard Space Flight Center (GSFC) for the James Webb Space Telescope (JWST) to enable cryogenic (approximately 35 K) spectrographic astronomy measurements in the near-infrared region. Functioning as a focal plane object selection device, the MSA is a 2-D programmable aperture mask with fine resolution, high efficiency and high contrast. The MSA are close- packed silicon nitride shutters (cell size of 100 x 200 microns) patterned with a torsion flexure to allow opening to 90 degrees. A layer of magnetic material is deposited onto each shutter to permit magnetic actuation. Two electrodes are deposited, one onto each shutter and another onto the support structure side-wall, permitting electrostatic latching and 2-D addressing. New techniques were developed to test MSA under mission-similar conditions (8 K less than or equal to T less than 300K). The magnetic rotisserie has proven to be an excellent tool for rapid characterization of MSA. Tests conducted with the magnetic rotisserie method include accelerated cryogenic lifetesting of unpackaged 128 x 64 MSA and parallel measurement of the magneto-mechanical stiffness of shutters in pathfinder test samples containing multiple MSA designs. Lifetest results indicate a logarithmic failure rate out to approximately 10(exp 6) shutter actuations. These results have increased our understanding of failure mechanisms and provide a means to predict the overall reliability of MSA devices.

King, T. T.

Fabrication of MEMS-Based Microshutter Arrays for Optical Transmission Selection

A MEMS-based programmable aperture mask is under development at the NASA Goddard Space Flight Center. Termed the Microshutter (u-shutter) Array, the device will be used to control the transmission of light, with both high efficiency and contrast, to a multi-object spectrometer on the James Webb Space Telescope. Fabrication of the p-shutter array employs several novel designs and processing techniques. The current generation of micro-shutters consists of 128x64 pixel arrays with unit cell dimensions of 100x200 microns. Shutters are patterned in silicon nitride and sit on a 100 micron silicon frame that is DRIE etched below each shutter. The front and back sides of the device are shown. A magnetic cobalt-iron alloy patterned on top of the shutter allows it to be actuated 90 degrees out-of-plane, into the frame, by an external magnetic field. An electrode on the shutter and a vertical electrode on the sidewall of the frame, approximately 90pm deep, allow them to be electrostatically latched in their rotated position. The vertical electrode is deposited and patterned on the backside of the frame in a single step using a directionally controlled evaporation. Individual addressing of shutters for electrostatic latching is accomplished via a crosspoint addressing scheme, with no on-chip active components. A portion of an array with shutters in the open, latched, and closed positions is shown. Light loss at shutter edges is minimized by an overhanging aluminum light-shield that is anchored to the frame. A photoresist sacrificial layer is used to raise the light-shield up and over the 2 micron gap that surrounds each pixel. After completion, arrays are subjected to life cycle, environmental and optical testing. Fabricated devices have survived 10(exp 6) actuation cycles at both room and cryogenic temperatures and a 14g rms launch-simulation test. Optical testing has shown contrast measurements between open and closed shutters up to 10000:1.

Lynch, Bernard A.

Lead sulfide - Silicon MOSFET infrared focal plane development

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Barrett, J. R.

Monolithic lead salt-silicon focal plane development

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Barrett, J. R.

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.

Implantable electrical device

A fully implantable and self contained device is disclosed composed of a flexible electrode array for surrounding damaged nerves and a signal generator for driving the electrode array with periodic electrical impulses of nanoampere magnitude to induce regeneration of the damaged nerves.

Jhabvala, M. D.

Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation

A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

Jhabvala, M. D.

Monitoring fetal pH by telemetry

Telemetry unit has been developed for possible use in measuring scalp-tissue pH and heart rate of unborn infant. Unit radius data to receiver as much as 50 ft. away. Application exists during hours just prior to childbirth to give warning of problems that might require cesarean delivery.

Blum, A.

Improved process control for VMOS FET's

Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.

Jhabvala, M. D.

A complementary MOS process

The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated circuits is described. The fixed-gate array concept is presented as a means of obtaining CMOS integrated circuits in a fast and reliable fashion. Examples of CMOS circuits fabricated by both the conventional method and the fixed-gate array method are included. The electrical parameter specifications and characteristics are given along with typical values used to produce CMOS circuits. Temperature-bias stressing data illustrating the thermal stability of devices manufactured by this process are presented. Results of a preliminary study on the radiation sensitivity of circuits manufactured by this process are discussed. Some process modifications are given which have improved the radiation hardness of our CMOS devices. A formula description of the chemicals and gases along with the gas flow rates is also included.

Jhabvala, M. D.