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Jesser, W. A.

Publications and source records attributed to Jesser, W. A..

14 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Characterization of Metalorganic Chemical Vapor Deposition

A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

Jesser, W. A.↗
NASA NTRS1994

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗
NASA NTRS1992

Gravitational and thermal effects in CVD flow and deposition

A three-phased approach is used to investigate the transport phenomena occurring in horizontal CVD reactors. The three phases are made up of laser velocimetry experimental investigations, numerical CFD modeling, and metal-organic chemical vapor deposition experimental studies. Laser velocimetry measurements of flow in a horizontal reactor with a cylindrical flow channel and tilted susceptor demonstrate velocity components arising from thermal expansion and buoyancy effects that significantly exceed the velocity components due to the external applied flow. MOCVD of InP and GaAs thin films in a horizontal reactor channel with a rectangular cross section and a tilted susceptor has also been examined.

Clark, I. O.↗
NASA NTRS1988

The prediction and confirmation of critical epitaxial parameters

The coherency-incoherency transition in epitaxial crystals is said to take place at a critical misfit f(c) or, for a system in which a monolayer is subcritical, at a critical thickness h(c). In this paper, the physical principles and models used to predict critical parameters are analyzed and put into perspective. The dependence of the relevant principles on the equilibrium-nonequilibrium conditions under which the quantities are measured in practice is stressed. The advantages and disadvantages of the models used (essentially the Frenkel-Kontorowa and Volterra models) are highlighted.

Van Der Merwe, Jan↗
NASA NTRS1988

An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices. II - Layers of unequal elastic constants and thicknesses

The theoretical model developed by van der Merwe and Jesser (1988) is extended to permit the exact determination of the critical misfit and critical thickness of an epitaxially grown superlattice made up of layers with differing elastic constants and thicknesses. Lateral force balances are maintained by means of an explicit relationship between the homogeneous misfit strains and the thicknesses and moduli. A number of simplifying approximations are introduced, and sample numerical results are presented in graphs.

Jesser, W. A.↗
NASA NTRS1988

An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices - Layers of equal elastic constants and thicknesses

A parabolic interaction potential has been used to develop a model for calculating the misfit dislocation (MD) energy in the case of a superlattice of alternating layers of materials with equal elastic constants and thicknesses. The model, which is believed to be a good one for small misfits and to have some merit for covalent bonded materials, is exactly solvable for the critical thickness above which it is energetically favorable to lose coherency by the introduction of MDs into the interfaces. It was found, for a given misfit f, that the critical thickness for epitaxial superlattices free from their substrate is somewhat more than four times that for a single epilayer on a thick substrate. Furthermore, the critical thickness varies almost inversely with misfit to the power 1.22 when Poisson's ratio is 1/3. It was also shown that the critical misfit f(c) obtained by equating maximal misfit strain and MD energies is a significant overestimate of f(c). The results for a superlattice are compared with those of a thin layer on a thick substrate.

Van Der Merwe, Jan H.↗
NASA NTRS1987

Stress effects in multilayers

Calculations of interfacial stress in abrupt junctions and its effect on the defect state of the interface are examined.

Jesser, W. A.↗
NASA NTRS1986

Low energy dislocation structures in epitaxy

The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

Van Der Merwe, Jan H.↗
NASA NTRS1986

Small particle melting of pure metals

Submicron-sized crystallites of lead, tin, indium and bismuth were melted in situ in the modified specimen chamber of a Siemens transmission e lectron microscope. Melting point and size determinations were made directly from the dark field images of the crystallites. Particles exhibited melting points that decreased with decreasing particle size. A near-linear relationship was observed for the melting point as a function of the reciprocal of the radius. Thermodynamnic expressions based on the significant contributions of the surface energy to the free energy of the system also suggest a linear relation. Other factors, such as shape and surface contamination, were also observed to affect the size-dependent melting of particles. Crystallites of extended platelet shape did not exhibit a significant depression in melting point. Elevated residual gas pressures were found to lessen the melting point depression of spherical particles.

Allen, G. L.↗
NASA NTRS1985

Charged particle modification of ices in the Saturnian and Jovian systems

The modification by ion bombardment of the surfaces of icy objects in the Saturnian and Jovian systems is discussed. Chemical changes in ices are induced by breaking of bonds and by implantation of incident ions. Long-term irradiation by fast ions produces physical changes such as increasing the surface reflectivity and ability to scatter light. On large satellites, molecules which are ejected by ion bombardment are redistributed across the surfaces of large satellites. For small satellites and ring particles bombarded by ions, such as those of Saturn, most or all of the sputtered material is lost to space, forming a neutral torus in the locale of the satellite orbits and rings and supplying ions to the magnetosphere. Noting the existence of such a torus, the sputter erosion and possible stabilization of the E-ring of Saturn is discussed.

Johnson, R. E.↗
NASA NTRS1984

Solidification behavior of low and high thermal conductivity materials in a Bridgman-Stockbarger furnace

The solid-liquid interface position and the temperature gradients in both the solid and liquid at the interface have been studied in a modified Bridgman-Stockbarger crystal growth furnace. These crystal growth factors have been studied as a function of ampoule translation rate, materials properties, and the size and temperature of a small auxiliary heater placed at the edge of the furnace hot zone. It has been found that the interface position with respect to a furnace reference point is essentially constant during a run for a low thermal conductivity material whereas the interface position changes continuously during a run with high thermal conductivity material. However, the ampoule translation rate and auxiliary heater conditions produce interface position changes in both high and low thermal conductivity materials.

Ejim, T. I.↗
NASA NTRS1982

Terrestrial growth of lead-tin-telluride by techniques related to low G growth

A modified Bridgman-Stockbarger furnace was constructed for a study of the solidification of silver, germanium and lead-tin-telluride. The melt-solid interface position with respect to the furnace and its temperature profile was determined by measuring the discontinuity in the slope of temperature as a function of position in the melt and in the solid. The results show that the interface position of the semiconductors germanium and lead-tin-telluride was essentially constant with respect to the furnace and hence the growth rate was constant and equal to the sample translation rate of 0.046 cm/min and 0.178 cm/min in each case. The metal, silver, on the other hand showed a continuous interface migration toward the hot zone of the furnace and always exhibited a growth rate which was higher than the ampoule translation rate. The K sub L/K sub S ratio of lead-tin-telluride was determined to be 2.33 + or - 0.06 where K sub L,S denotes the thermal conductivity of the liquid, solid respectively. The value of K sub L was calculated to be about 0.054 Watt 0.1 cm 0.1 K. The diffusion boundary layer thickness was calculated for lead-tin-telluride to be about 0.05 cm using a liquid diffusivity of .00007 sq cm/sec.

Jesser, W. A.↗