Engineering topics

Jenkins, Phillip P.

Publications and source records attributed to Jenkins, Phillip P..

At least 19 records

NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗

NASA NTRS2007

The Extrapolation of High Altitude Solar Cell I(V) Characteristics to AM0

The high altitude aircraft method has been used at NASA GRC since the early 1960's to calibrate solar cell short circuit current, ISC, to Air Mass Zero (AMO). This method extrapolates ISC to AM0 via the Langley plot method, a logarithmic extrapolation to 0 air mass, and includes corrections for the varying Earth-Sun distance to 1.0 AU and compensating for the non-uniform ozone distribution in the atmosphere. However, other characteristics of the solar cell I(V) curve do not extrapolate in the same way. Another approach is needed to extrapolate VOC and the maximum power point (PMAX) to AM0 illumination. As part of the high altitude aircraft method, VOC and PMAX can be obtained as ISC changes during the flight. These values can then the extrapolated, sometimes interpolated, to the ISC(AM0) value. This approach should be valid as long as the shape of the solar spectra in the stratosphere does not change too much from AMO. As a feasibility check, the results are compared to AMO I(V) curves obtained using the NASA GRC X25 based multi-source simulator. This paper investigates the approach on both multi-junction solar cells and sub-cells.

Snyder, David B.↗

NASA NTRS2005

Forward Technology Solar Cell Experiment (FTSCE) for MISSE-5 Verified and Readied for Flight on STS-114

The Forward Technology Solar Cell Experiment (FTSCE) is a space solar cell experiment built as part of the Fifth Materials on the International Space Station Experiment (MISSE-5): Data Acquisition and Control Hardware and Software. It represents a collaborative effort between the NASA Glenn Research Center, the Naval Research Laboratory, and the U.S. Naval Academy. The purpose of this experiment is to place current and future solar cell technologies on orbit where they will be characterized and validated. This is in response to recent on-orbit and ground test results that raised concerns about the in-space survivability of new solar cell technologies and about current ground test methodology. The various components of the FTSCE are assembled into a passive experiment container--a 2- by 2- by 4-in. folding metal container that will be attached by an astronaut to the outer structure of the International Space Station. Data collected by the FTSCE will be relayed to the ground through a transmitter assembled by the U.S. Naval Academy. Data-acquisition electronics and software were designed to be tolerant of the thermal and radiation effects expected on orbit. The experiment has been verified and readied for flight on STS-114.

Jenkins, Phillip P.↗

NASA NTRS2005

High-Efficiency Multi-Junction Space Solar Development Utilizing Lattice Grading

Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction solar cell comprised of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs bottom cell grown on buffered GaAs is reported. The performance of stand-alone 1.62 eV InGaP and 1.1 eV InGaAs cells is compared to that of the dual junction cell. Projected AM0 efficiencies of 15.7% and 16.5% are expected for the 1.62 eV InGaP and 1.1 eV InGaAs cells grown on buffered GaAs. The dual junction cell has a projected one-sun AM0 conversion efficiency of 17%. The projected efficiencies are based upon the application of an optimized anti-reflective coating (ARC) to the as-grown cells. Quantum efficiency (QE) data obtained from the dual junction cell indicate that is is bottom cell current limited with the top cell generating 50% more current than the bottom cell. A comparison of the QE data for the stand-alone 1.1 eV InGaAs cell to that of the 1.1 eV InGaAs bottom cell in the tandem configuration indicates a degradation of the bottom cell conversion efficiency in the tandem configuration. The origin of this performance degradation is at present unknown. If the present limitation can be overcome, then a one-sun AM0 efficiency of 26% is achievable with the 1.62 eV/1.1 eV dual junction cell grown lattice-mismatched to GaAs.

Stan, Mark A.↗

NASA NTRS2004

Mars Solar Power

NASA missions to Mars, both robotic and human, rely on solar arrays for the primary power system. Mars presents a number of challenges for solar power system operation, including a dusty atmosphere which modifies the spectrum and intensity of the incident solar illumination as a function of time of day, degradation of the array performance by dust deposition, and low temperature operation. The environmental challenges to Mars solar array operation will be discussed and test results of solar cell technology operating under Mars conditions will be presented, along with modeling of solar cell performance under Mars conditions. The design implications for advanced solar arrays for future Mars missions is discussed, and an example case, a Martian polar rover, are analyzed.

Landis, Geoffrey A.↗

NASA NTRS2004

High Beginning-of-Life Efficiency p/n InP Solar Cells

We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

Hoffman, Richard W., Jr.↗

NASA NTRS2004

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗

NASA NTRS2004

Scanning Tunneling Optical Resonance Microscopy Developed

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Bailey, Sheila G.↗

NASA NTRS2004

Photovoltaic Cell Operation on Mars

The Martian surface environment provides peculiar challenges for the operation of solar arrays: low temperature, solar flux with a significant scattered component that varies in intensity and spectrum with the amount of suspended atmospheric dust, and the possibility of performance loss due to dust deposition on the array surface. This paper presents theoretical analyses of solar cell performance on the surface of Mars and measurements of cells under Martian conditions.

Landis, Geoffrey A.↗

NASA NTRS2004

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Wilt, David M.↗

NASA NTRS2002

Ozone Correction for AM0 Calibrated Solar Cells for the Aircraft Method

The aircraft solar cell calibration method has provided cells calibrated to space conditions for 37 years. However, it is susceptible to systematic errors due to ozone concentrations in the stratosphere. The present correction procedure applies a 1 percent increase to the measured I(sub SC) values. High band-gap cells are more sensitive to ozone absorbed wavelengths (0.4 to 0.8 microns) so it becomes important to reassess the correction technique. This paper evaluates the ozone correction to be 1+O3xFo, where O3 is the total ozone along the optical path, and Fo is 29.8 x 10(exp -6)/du for a Silicon solar cell, 42.6 x 10(exp -6)/du for a GaAs cell and 57.2 x 10(exp -6)/du for an InGaP cell. These correction factors work best to correct data points obtained during the flight rather than as a correction to the final result.

Snyder, David B.↗

NASA NTRS2002

Dust Mitigation for Mars Solar Arrays

Settling of atmospheric dust onto the surface of the solar array is potentially a lifetime-limiting factor for a power system on any Mars mission. For long-term operation of arrays on Mars, it will be necessary to develop techniques to remove deposited dust. Dust is expected to adhere to the array by Van der Waals adhesive forces. These forces are quite strong at the dust particle sizes expected. Dust removal methods must overcome this force. Removal methods can be categorized briefly into four categories: natural, mechanical, electromechanical, and electrostatic. The environment of Mars is expected to be an ideal one for use of electrostatic dust-removal techniques.

Landis, Geoffrey A.↗

NASA NTRS2002

Ozone Correction for AM0 Calibrated Solar Cells for the Aircraft Method

The aircraft solar cell calibration method has provided cells calibrated to space conditions for 37 years. However, it is susceptible to systematic errors due to ozone concentration in the stratosphere. The present correction procedure applies a 1% increase to the measured Isc values. High band-gap cells are more sensitive to ozone adsorbed wavelengths so it has become important to reassess the correction technique. This paper evaluates the ozone correction to be 1+{O3}sup Fo, where Fo is 29.5x10(exp-6)/d.u. for a Silicon solar cell and 42.2xl0(exp -6)/d.u. for a GaAs cell. Results will be presented for high band-gap cells. A comparison with flight data indicates that this method of correcting for the ozone density improves the uncertainty of AM0 Isc to 0.5%.

Snyder, David B.↗

NASA NTRS2001

Advanced Power Technologies Developed for the Starshine 3 Satellite

The need for smaller, lightweight, autonomous power systems has recently increased with the increasing focus on microsatellites and nanosatellites. The NASA Glenn Research Center has been working on the development of such systems and recently developed several power technology demonstrations in conjunction with Project Starshine. The Starshine 3 microsatellite is designed to measure the density of the Earth's upper atmosphere as a function of solar activity and is primarily a passive experiment. Therefore, it did not need electrical power to successfully complete its primary mission, although a power system for future Starshine satellites was desired that could be used to power additional instruments to enhance the data collected. This created an excellent opportunity to test new power technologies capable of supplying this future need. Several Government and commercial interests teamed up with Glenn to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 is also the inaugural flight of a novel integrated microelectronic power supply (IMPS) developed at Glenn.

Wilt, David M.↗

NASA NTRS2000

The 2001 Mars In-Situ-Propellant-Production Precursor (MIP) Flight Demonstration

The successful performance of the five individual demonstrations of MARS IN-SITU-PROPELLANT-PRODUCTION PRECURSOR (MIP) will provide both knowledge of and confidence in the reliability of this technology. At the completion of this flight demonstration, the MIP Team will be able to: a) recommend preferred hardware configurations for the intake and adsorption of carbon dioxide from the Martian atmosphere; b) understand the performance characteristics of zirconia cells to generate propellant-grade oxygen; c) understand long-term performance characteristics of advanced solar cells/arrays operated in the actual Mars environment; d) evaluate the functionality of methods to mitigate the deposition of airborne dust onto solar arrays; and e) recommend preferred hardware designs for innovative thermal management including the radiation of heat to the outside environment.

Kaplan, David I.↗

NASA NTRS1999

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Barron, Andrew R.↗

NASA NTRS1999

Rare Earth Doped Yttrium Aluminum Garnet (YAG) Selective Emitters

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K.

Chubb, Donald L.↗

NASA NTRS1999

Rare Earth Doped High Temperature Ceramic Selective Emitters

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium-holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0.38 at 1700 K but only 0.19 at 1262 K.

Chubb, Donald L.↗