Engineering topics

Janesick, James R.

Publications and source records attributed to Janesick, James R..

28 records · Page 2

NASA NTRS1989

Development of large CCD arrays with enhanced UV performance

A development status evaluation is presented for proprietary UV-range CCDs for military and scientific applications requiring pixel sizes in the 18-micron range. The most recent developments in UV/X-ray responsive detectors have their bases in the backside illumination of multipinned phase (MPP) 1024 x 1024 CCD arrays, as well as in the initial exploration of open-pinned phase (OPP) techniques. The frontside performance of both MPP and OPP devices is noted to be excellent as well, and pinouts and mounting techniques have been defined which allow easy front-back operation comparisons. Novel backside processing techniques are being refined.

Varian, Richard H.↗

NASA NTRS1988

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗

NASA NTRS1987

Large format, high resolution images sensors

The performance requirements for scientific-quality CCDs are discussed, focusing on the design of two devices, and the progress toward achieving the desired performance is discussed. These devices are intended for rear-illuminated applications and have 512 x 512 and 2048 x 2048 pixel formats. The thinned 10 to 20 micron thick Si membrane is fully supported by a unique glass ceramic substrate. Quantum efficiencies of greater than 70 percent at 700 nm and greater than 40 percent at wavelengths less than 400 nm have been measured on a test device. Dark currents as low as 6 pA/sq cm also have been measured recently.

Blouke, Morley M.↗

NASA NTRS1987

Flash technology for charge-coupled-device imaging in the ultraviolet

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

Janesick, James R.↗

NASA NTRS1987

Current status of the 800 x 800 charge-coupled-device image sensor

This paper presents an updated version of a previous paper describing a three-phase 800 x 800 charge-coupled-device image sensor. Although this device was originally designed to be used as the sensor for the Wide Field/Planetary Camera on the Hubble Space Telescope, it is now being used as the detector of choice on many ground-based telescopes. The performance of the device is reviewed, and the important contributions it has made to the understanding of general CCD performance is indicated.

Blouke, Morley M.↗

NASA NTRS1987

Charge-coupled-device response to electron beam energies of less than 1 keV up to 20 keV

Recent developments of backside treatment for the backside-illuminated scientifc CCD imagers have shown near-theoretical efficiency even at the short wavelength region of the spectrum. By using SEM performance comparisons of backside-treated and untreated CCDs to an electron flux varying from 1 to 100 pA and beam energy ranging from less than 1 keV up to 20 keV are obtained. The theoretical analysis, the SEM testing procedure, and the quantum efficiency measurement results are presented. It is shown, for example, that the average quantum efficiency increases from less than 1 percent for an untreated CCD to nearly 40 percent for a backside-treated CCD at a beam energy of 1 kev.

Daud, Taher↗

NASA NTRS1987

Scientific charge-coupled devices

The charge-coupled device dominates an ever-increasing variety of scientific imaging and spectroscopy applications. Recent experience indicates, however, that the full potential of CCD performance lies well beyond that realized in devices currently available.Test data suggest that major improvements are feasible in spectral response, charge collection, charge transfer, and readout noise. These properties, their measurement in existing CCDs, and their potential for future improvement are discussed in this paper.

Janesick, James R.↗

NASA NTRS1987

Laser pulse detection method and apparatus

A sensor is described for detecting the difference in phase of a pair of returned light pulse components, such as the two components of a light pulse of an optical gyro. In an optic gyro, the two light components have passed in opposite directions through a coil of optical fiber, with the difference in phase of the returned light components determining the intensity of light shining on the sensor. The sensor includes a CCD (charge coupled device) that receives the pair of returned light components to generate a charge proportional to the number of photons in the received light. The amount of the charge represents the phase difference between the two light components. At a time after the transmission of the light pulse and before the expected time of arrival of the interfering light components, charge accumulating in the CCD as a result of reflections from optical components in the system, are repeatedly removed from the CCD, by transferring out charges in the CCD and dumping these charges.

Goss, Willis C.↗

NASA NTRS1987

CCD Memory

CCD memory device yields over 6.4 x 10 to the eighth power levels of information on single chip. Charge-coupled device (CCD) demonstrated to operate as either read-only-memory (ROM) or photon-programmable memory with capacity of 640,000 bits, with each bit capable of being weighted to more than 1,000 discrete analog levels. Larger memory capacities now possible using proposed approach in conjunction with CCD's now being fabricated, which yield over 4 x 10 to the ninth power discrete levels of information on single chip.

Janesick, James R.↗

NASA NTRS1987

CCD Luminescence Camera

New diagnostic tool used to understand performance and failures of microelectronic devices. Microscope integrated to low-noise charge-coupled-device (CCD) camera to produce new instrument for analyzing performance and failures of microelectronics devices that emit infrared light during operation. CCD camera also used to indentify very clearly parts that have failed where luminescence typically found.

Janesick, James R.↗