Engineering topics

Janesick, James

Publications and source records attributed to Janesick, James.

9 records

NASA NTRS1993

Locating Electron Traps In A CCD

"Pocket pumping" is technique for mapping sizes of electron-trapping defects and picture elements within which traps located in charge-coupled device (CCD). Two kinds of traps: forward and reverse. Pocket pumping relies on fact that in terms of charges measurable by external circuitry, forward traps affect only forward, while reverse traps affect only reverse, transfer of charge along row or column of picture elements. Charges in picture elements shifted back and forth many times to amplify trapping effect by repetition. Traps smaller than 1 electron detected by this method.

Janesick, James↗

NASA NTRS1992

Preventing Blooming In CCD Images

Clocking scheme for charge-coupled-device (CCD) imaging photodetector prevents smearing of bright spots and eliminates residual images. Also imposes charge-collecting electric field of optimum-full-well configuration, minimizes nonuniformities among picture elements, and keeps dark current low. Works under almost any lighting conditions.

Janesick, James↗

NASA NTRS1992

Notch Charge-Coupled Devices

Notch charge-coupled devices are imaging arrays of photodetectors designed to exhibit high charge-transfer efficiencies necessary for operation in ultra-large array, and less vulnerable to degradation by energetic protons, neutrons, and electrons. Main channel of horizontal register includes deep narrow inner channel (notch). Small packets of charge remain confined to notch. Larger packets spill into rest of channel; transferred in usual way. Degradation of charge-transfer efficiency by energetic particles reduced.

Janesick, James↗

NASA NTRS1989

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗

NASA NTRS1989

Open pinned-phase CCD technology

A novel CCD technology, open pinned-phase (OPP) technology, is presented. Particular attention is given to the design and process features of an OPP-CCD that unite multi- and virtual-phase technologies. It is found that the OPP/CCD will produce a modest short-wavelength QE and excellent charge collection efficiency characteristics which are similar to those of the virtual-phase CCD. However, expensive processes related to thinning, backside accumulation, and packaging are not required in the present case.

Janesick, James↗

NASA NTRS1988

Fano-noise-limited CCDs

Recent developments of scientific CCDs have produced sensors that achieve ultra low read noise performance (less than 2 electrons rms) and near perfect charge transfer efficiency (0.9999996) without the addition of a fat-zero. This progress has now made it possible to achieve Fano-noise-limited performance in the soft X-ray where the detector's energy resolution is primarily limited by the statistical variation in the charge generated by the interacting X-ray photon. In this paper, Fano-noise-limited test data is presented for two different CCD types and a CCD derived estimate of the Fano factor is determined. By evaluating ultra low-modulation images (less than 1 electron peak-to-peak) it is shown that the CCD's global CTE is now superior to its read noise floor. To capitalize on this capability CCD manufacturers are now focusing their attention on reducing the noise floor below the 1 electron level thereby matching the sensor's CTE performance. This improvement, if accomplished, will push Fano-noise-limited performance for the CCD into the extreme ultra-violet.

Janesick, James↗

NASA NTRS1988

Performance characteristics of CCDs for the ACIS experiment

The search for the optimum CCD to be used at the focal surface of the Advanced X-ray Astrophysics Facility (AXAF) is described. The physics of the interaction of X-rays in silicon through the photoelectric effect is reviewed. CCD technology at the beginning of the AXAF definition phase is summarized, and the results of the CCD enhancement program are discussed. Other sources of optimum CCDs are examined, and CCD enhancements made at MIT Lincoln Laboratory are addressed.

Garmire, Gordon P.↗

NASA NTRS1986

CCD advances for X-ray scientific measurements in 1985

A theoretical model is presented which predicts the output response of a CCD to soft X-ray spectra. The model simulates the four fundamental parameters that ultimately limit CCD performance: quantum efficiency, charge collection efficiency, charge transfer efficiency, and read noise. Simulated results are presented for a wide variety of CCD structures, and general conclusions are presented about achieving a practical balance of sensitivity, energy, and spatial resolution for an AXAF instrument. The results of the analysis are compared to an existing state-of-the art CCD and improvements which will be made in the near future are projected.

Janesick, James↗

NASA NTRS1986

The CCD flash gate

Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.

Janesick, James↗