Single-event upsets in highly scaled commercial SOI microprocessor
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Engineering topics
Publications and source records attributed to Irom, Farokh.
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Testing methods for memories and non-volatile memories have become increasingly sophisticated as they become denser and more complex. High frequency and faster rewrite times as well as smaller feature sizes have led to many testing challenges. This paper outlines several testing issues posed by novel memories and approaches to testing for radiation and reliability effects. We discuss methods for measurements of Total Ionizing Dose (TID).