Engineering topics
Irom, Farokh
Publications and source records attributed to Irom, Farokh.
Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory
Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory
Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
Single Event Effects Characterization of Dosed UT200SpWPHY01 SpaceWire Physical Layer Transceiver
We present SEE test results for the Cobham SpaceWire transceiver after dosing the device to 300 krad(Si). We performed SEU characterization with variable data rates and patterns. Events resembling SEFIs were also observed and recorded.
Single-Event Latchup Measurements on Wireless and Powerline Network Communication Devices for Use in Mars Missions
This paper reports recent single-event latchup results for a variety of microelectronic devices that include Wireless and Powerline Network Communication devices. The data were collected to evaluate these devices for possible use in NASA Mars missions.
Destructive single-events and latchup in radiation-hardened switching regulators
Single-event destructive behavior and latchup has been observed in two separate radiation hardened switching regulators. We discuss the test conditions and observed results.
Destructive Single-Events and Latchup in Radiation-Hardened Switching Regulators
Single-event destructive behavior and latchup has been observed in two separate radiation-hardened switching regulators. We discuss the test conditions and observed results.
Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.
Single-Event Latchup Measurements on COTS Electronic Devices for Use in ISS Payloads
This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.
Proton Damage in LED and Phototransistor of Micropac 66179 Optocoupler
This paper reports proton damage in LED and phototransistor of the Micropac 66179 optocoupler. Analysis of the test data reveals interesting information, such as the dependence of the transistor gain on irradiation and photocurrent.
Measurements of Proton Displacement Damage in Several Commercial Optocouplers
Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with I(sub F) = 10 mA at 1 x 10(exp 12) 1-MeV n/sq.cm fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 10(exp 12) 1-MeV n/sq.cm fluence in Silicon, respectively.
Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012
The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.
Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012
The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.
Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial Analog to Digital Converters
This paper reports single-event latchup and total dose results for a variety of analog to digital converters targeted for possible use in NASA spacecraft's. The compendium covers devices tested over the last 15 years.
Compendium of Recent Test Results of Single Event Effects Conducted by the Jet Propulsion Laboratory
This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.
Non Volatile Flash Memory Radiation Tests
Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.