Engineering topics

Imai, Yasuhiko

Publications and source records attributed to Imai, Yasuhiko.

4 records

DOE OSTI2016

Characterization of domain structure in one-dimensional SrRuO{sub 3} nanostructure using synchrotron x-ray microdiffraction

SrRuO{sub 3} (SRO) thin films with a geometric shape of one-dimensional stripes can be epitaxially grown on a SrTiO{sub 3} (STO) substrate. Conventional X-ray reciprocal space map (RSM) measurements revealed that the stripes consist of multiple crystallographic domains. We performed synchrotron X-ray microdiffraction measurements to determine whether the single stripe of the SRO has a single crystallographic domain or not. Spacing between stripes is ~200 nm that is comparable to a beam size available for the microdiffraction. The synchrotron X-ray microdiffraction experiment was performed at BL13XU, SPring-8. RSMs of asymmetric diffractions around STO 204 reflection were measured by a broad-beam (200 × 200 µm{sup 2}) and the sub-micro-beam (250(h) × 190(v) nm{sup 2}). Both SRO 260 and 620 are seen in the RSM measured by the broad-beam due to the crystallographic twinning. On the other hand, only SRO 620 is observed in the RSM measured by the sub-micro-beam. The result shows the domain length of the single stripe SRO thin film is longer than the vertical beam size of 190 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2016

Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O{sub 3} films

The converse piezoelectric responses of (111)- and (001)-epitaxial tetragonal Pb(Zr{sub 0.35}Ti{sub 0.65})O{sub 3} [PZT] films were compared to investigate the orientation dependence of the substrate clamping effect. Synchrotron X-ray diffraction (XRD) and piezoelectric force microscopy revealed that the as-grown (111)-PZT film has a polydomain structure with normal twin boundaries that are changed by the poling process to inclined boundaries, as predicted by Romanov et al. [Phys. Status Solidi A 172, 225 (1999)]. Time-resolved synchrotron XRD under bias voltage showed the negligible impact of substrate clamping on the piezoelectric response in the (111)-PZT film, unlike the case for (001)-PZT film. The origin of the negligible clamping effect in the (111)-PZT film is discussed from the viewpoint of the elastic properties and the compensation of lattice distortion between neighboring domains.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2010

High-Angular-Resolution Microbeam X-Ray Diffraction with CCD Detector

We have introduced a CCD-type two-dimensional X-ray detector for a microbeam X-ray diffraction system using synchrotron radiation, so that we can measure local reciprocal space maps (RSM) of samples rapidly. A local RSM of a strain-relaxed SiGe 004 grown on a Si (001) substrate was measured in higher-angular-resolution and faster than a conventional way. The measurement was achieved in 1 h 40 min. with the 2theta resolution of 80 murad and the spatial resolution of 1.4(h)x0.5(v) {mu}m{sup 2}. The introduction of the CCD enabled us to measure RSMs at many points in a sample, that is, the distribution of strain fields and lattice tilts can be revealed in high-angular- and high-spatial-resolution.

36 MATERIALS SCIENCE↗