Engineering topics
Publications and source records attributed to Hunt, Brian D..
Methods and devices for spectroscopic identification of molecules using nanoscale wires are disclosed. According to one of the methods, nanoscale wires are provided, electrons are injected into the nanoscale wire; and inelastic electron scattering is measured via excitation of low-lying vibrational energy levels of molecules bound to the nanoscale wire.
We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.
We have investigated the field emission behavior of lithographically patterned bundles of multiwalled carbon nanotubes arranged in a variety of array geometries. Such arrays of nanotube bundles are found to perform significantly better in field emission than arrays of isolated nanotubes or dense, continuous mats of nanotubes, with the field emission performance depending on the bundle diameter and inter-bundle spacing. Arrays of 2-micrometers diameter nanotube bundles spaced 5 micrometers apart (edge-to-edge spacing) produced the largest emission densities, routinely giving 1.5 to 1.8 A/cm(sup 2) at approximately 4 V/micrometer electric field, and greater than 6 A/cm(sup 2) at 20 V/micrometers.
A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.
Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.
Improved microbolometers of superconducting-transition type developed with view toward eventual fabrication of staring, infrared-imaging planar arrays of such microbolometers integrated with addressing electronic circuitry. Superconducting thin films in microbolometers epitaxial. These devices exhibit high sensitivity and low noise.
High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).
Superconductor-Insulator Superconductor (SIS) tunnel junctions made of NbN/MgO/NbN and Nb/AlOx/Nb, with cross-sectional areas of about 0.30 and 0.25 micrometer(Sup2) respectively, fabricated and tested for use as mixers at frequencies near 205 GHz. Cross sections must be small to make capacitances of devices acceptably small for operation at this frequency. NbN and Nb good materials choices as superconductors because of high energy gap, and mechanically and electrically rugged and chemically stable.
Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.
Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist solely of materials in Y/Ba/Cu/O system fabricated in edge geometry. Made of different materials described in "SNS Device Made With Edge-Defined Geometry" (NPO-18303). Advantages include desirable electrical characteristics and less difficulty in fabrication. Attractive for development into high-frequency oscillators, magnetic-field sensors, and submillimeter-wave mixers.
Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist of high-temperature superconductor YBa(2)Cu(3)O(7-delta), normal conductor Au, and conventional superconductor Nb, fabricated in sandwich geometry. Devices and processes by which fabricated are part of continuing effort to develop SNS microbridges for use in superconducting quantum interference devices (SQUIDS's) or as mixers or local oscillators operating at frequencies of hundreds of gigahertz. Results show promise for manufacture of practical devices.
New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.
Coplanar-waveguide microwave low-pass filters based on thin films of high-critical-temperature superconductor YBa2Cu3O7 built and tested. Designed to provide passband of 0 to 9.5 GHz. Dimensions suitable for microwave integrated circuits and chosen to provide fairly stringent test of usefulness and practicality of design and of method of fabrication. Insertion loss less than filter made with copper.
YBa(2)Cu(3)O(7-delta)/Au/Nb superconductor/normal-conductor/superconductor (SNS) microbridge devices fabricated using now-standard lithographic techniques and edge geometry to define normally conducting links having submicron-by-several-microns cross-sectional dimensions. Edge geometry allows current to flow only in these planes and takes advantage of longer coherence length at critical YBa(2)Cu(3)O(7-delta)/Au/Nb interface. Sensitivity to damage on edge of YBa(2)Cu(3)O(7-delta)/Au/Nb reduced.
An application of the phenomenological loss equivalence method (Lee and Itoh, 1989) in modeling the microwave behavior of planar quasi-TEM superconducting transmission lines is presented. For validation of the model, data are used from measurements of a YBCO superconducting thin-film coplanar-waveguide lowpass filter on a lanthanum aluminate substrate. Measured and modeled S-parameters of an existing superconducting coplanar waveguide lowpass filter agree to within 0.3 dB in magnitude and 0.5 radians in phase. Extracted values for penetration depth and real part of the conductivity of the superconducting film are within 10 percent of other researchers' findings.
A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.