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Huang, L.

Publications and source records attributed to Huang, L..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Adiabatic physics of an exchange-coupled spin-dimer system: Magnetocaloric effect, zero-point fluctuations, and possible two-dimensional universal behavior

We present the magnetic and thermal properties of the bosonic-superfluid phase in a spin-dimer network using both quasistatic and rapidly changing pulsed magnetic fields. The entropy derived from a heat-capacity study reveals that the pulsed-field measurements are strongly adiabatic in nature and are responsible for the onset of a significant magnetocaloric effect (MCE). In contrast to previous predictions we show that the MCE is not just confined to the critical regions, but occurs for all fields greater than zero at sufficiently low temperatures. We explain the MCE using a model of the thermal occupation of exchange-coupled dimer spin states and highlight that failure to take this effect into account inevitably leads to incorrect interpretations of experimental results. In addition, the heat capacity in our material is suggestive of an extraordinary contribution from zero-point fluctuations and appears to indicate universal behavior with different critical exponents at the two field-induced critical points. Finally, the data at the upper critical point, combined with the layered structure of the system, are consistent with a two-dimensional nature of spin excitations in the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Platinum (II) azatetrabenzoporphyrins for near-infrared organic light emitting diodes

In this paper, we describe a series of platinum (II) azatetrabenzoporphyrin emitters for near-infrared (NIR) organic light emitting diode (OLED) applications. Platinum (II) aza-triphenyltetrabenzoporphyrin (PtNTBP) results in a 72 nm shift in the photoluminescent (PL) emission spectrum to 842nm compared to 770nm of the platinum (II) tetraphenyltetrabenzoporphyrin (PtTPTBP). Also, the full width at half maximum of the emission spectrum of PtNTBP was significantly narrowed to 27 nm compared to 40nm for PtTPTBP. The multilayer devices fabricated by thermal vacuum evaporation process employing PtTPTBP, PtNTBP, and cis-PtN 2 TBP exhibit electroluminescent (EL) emission peak at 770 nm, 848 nm, and 846 nm with the peak external quantum efficiency (EQE) of 8.0%, 2.8%, and 1.5%, respectively. Even with the decrease in EQE of devices employing PtNTBP and cis-PtN 2 TBP compared with those employing PtTPTBP, the combination of the spectral narrowing and the bathochromic shift to lower energy EL emission demonstrates the promise of PtNTBP for NIR applications. In the meanwhile, the solution-processed single-layer device using PtNTBP demonstrates the EQE of 0.33% and the peak EL emission at 844 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Surface Profile and Stress Field Evaluation using Digital Gradient Sensing Method

Shape and surface topography evaluation from measured orthogonal slope/gradient data is of considerable engineering significance since many full-field optical sensors and interferometers readily output accurate data of that kind. This has applications ranging from metrology of optical and electronic elements (lenses, silicon wafers, thin film coatings), surface profile estimation, wave front and shape reconstruction, to name a few. In this context, a new methodology for surface profile and stress field determination based on a recently introduced non-contact, full-field optical method called digital gradient sensing (DGS) capable of measuring small angular deflections of light rays coupled with a robust finite-difference-based least-squares integration (HFLI) scheme in the Southwell configuration is advanced here. The method is demonstrated by evaluating (a) surface profiles of mechanically warped silicon wafers and (b) stress gradients near growing cracks in planar phase objects.

42 ENGINEERING↗
DOE OSTI2016

Large reversible magnetocaloric effect in a Ni-Co-Mn-In magnetic shape memory alloy

Reversibility of the magnetocaloric effect in materials with first-order magnetostructural transformation is of vital significance for practical magnetic refrigeration applications. Here, we report a large reversible magnetocaloric effect in a Ni 49.8 Co 1.2 Mn 33.5 In 15.5 magnetic shape memory alloy. A large reversible magnetic entropy change of 14.6 J/(kg K) and a broad operating temperature window of 18 K under 5 T were simultaneously achieved, correlated with the low thermal hysteresis (-8 K) and large magnetic-field-induced shift of transformation temperatures (4.9 K/T) that lead to a narrow magnetic hysteresis (1.1 T) and small average magnetic hysteresis loss (48.4 J/kg under 5 T) as well. Furthermore, a large reversible effective refrigeration capacity (76.6 J/kg under 5 T) was obtained, as a result of the large reversible magnetic entropy change, broad operating temperature window, and small magnetic hysteresis loss. We conclude the large reversible magnetic entropy change and large reversible effective refrigeration capacity are important for improving the magnetocaloric performance, and the small magnetic hysteresis loss is beneficial to reducing energy dissipation during magnetic field cycle in potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Direct evidence for stress-induced transformation between coexisting multiple martensites in a Ni-Mn-Ga multifunctional alloy

The structural response of coexisting multiple martensites to stress field in a Ni-Mn-Ga multifunctional alloy was investigated by the in situ high-energy x-ray diffraction technique. Stress-induced transformation between coexisting multiple martensites was observed at 110 K, at which five-layered modulated (5M), seven-layered modulated (7M) and non-modulated (NM) martensites coexist. We found that a tiny stress of as low as 0.5 MPa could trigger the transformation from 5M and 7M martensites to NM martensite and this transformation is partly reversible. Besides the transformation between coexisting multiple martensites, rearrangement of martensite variants also occurs during loading, at least at high stress levels. The present study is instructive for designing advanced multifunctional alloys with easy actuation.

external-field-induced structural transformation↗
DOE OSTI2015

Large magnetic entropy change and magnetoresistance in a Ni 41 Co 9 Mn 40 Sn 10 magnetic shape memory alloy

A polycrystalline Ni 41 Co 9 Mn 40 Sn 10 (at. %) magnetic shape memory alloy was prepared by arc melting and characterized mainly by magnetic measurements, in-situ high-energy X-ray diffraction (HEXRD), and mechanical testing. A large magnetoresistance of 53.8% (under 5 T) and a large magnetic entropy change of 31.9 J/(kg K) (under 5 T) were simultaneously achieved. Both of these values are among the highest values reported so far in Ni-Mn-Sn-based Heusler alloys. The large magnetic entropy change, closely related to the structural entropy change, is attributed to the large unit cell volume change across martensitic transformation as revealed by our in-situ HEXRD experiment. Furthermore, good compressive properties were also obtained. Lastly, the combination of large magnetoresistance, large magnetic entropy change, and good compressive properties, as well as low cost makes this alloy a promising candidate for multifunctional applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe) 1-x (PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study of e + e - → p p ¯ π 0 in the vicinity of the ψ ( 3770 )

The process e + e - →pp¯π 0 has been studied by analyzing data collected at √s=3.773 GeV, at s√=3.650 GeV, and during a ψ(3770) line shape scan with the BESIII detector at the BEPCII collider. The Born cross section of pp¯π 0 in the vicinity of the ψ(3770) is measured, and the Born cross section of ψ(3770)→pp¯π 0 is extracted considering interference between resonant and continuum production amplitudes. Two solutions with the same probability and a significance of 1.5σ are found. The solutions for the Born cross section of ψ(3770)→pp¯π 0 are 33.8±1.8±2.1 pb and 0.06 +0.10 -0.04 +0.01 -0.01 pb (<0.22 pb at a 90% confidence level). Using the estimated cross section and a constant decay amplitude approximation, the cross section σ(pp¯→ψ(3770)π 0 ) is calculated for the kinematic situation of the planned P¯ANDA experiment. The maximum cross section corresponding to the two solutions is expected to be less than 0.79 nb at 90% confidence level and 122±10 nb at a center-of-mass energy of 5.26 GeV.

Ablikim, M.↗
DOE OSTI2014

Controlling magnetic order and quantum disorder in molecule-based magnets.

We investigate the structural and magnetic properties of two molecule-based magnets synthesized from the same starting components. Their different structural motifs promote contrasting exchange pathways and consequently lead to markedly different magnetic ground states. Through examination of their structural and magnetic properties we show that [Cu(pyz)(H 2 O)(gly) 2 ](ClO 4 ) 2 may be considered a quasi-one-dimensional quantum Heisenberg antiferromagnet whereas the related compound [Cu(pyz)(gly)](ClO 4 ) , which is formed from dimers of antiferromagnetically interacting Cu 2+ spins, remains disordered down to at least 0.03 K in zero field but shows a field-temperature phase diagram reminiscent of that seen in materials showing a Bose-Einstein condensation of magnons.

Lancaster, T.↗
DOE OSTI2014

Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

The temperature- and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. These obtained results provide a full understanding of the bound-to-quasi-bound state and the bound-to-quasi-continuum state transition, and thus allow for a better optimization of QWIPs performance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗