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Huang, D.

Publications and source records attributed to Huang, D..

41 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Analysis of energy states in modulation doped multiquantum well heterostructures

A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

Ji, G.↗
NASA NTRS1987

Optical investigation of highly strained InGaAs-GaAs multiple quantum wells

Low-temperature optical transmission spectra of several In(x)Ga(1-x)/GaAs strained MQWs with x = 0.13-0.19 and well widths of 85-213 A have been measured. The excitonic transitions up to 3C-3H were observed along with steplike structures corresponding to band-to-band transitions, identified as 1C-1L transitions. By fitting experimental results to the calculations, it is concluded that the light holes are in the GaAs barrier region (type II MQW), and the valence-band offset is determined to be 0.30. Attention is given to a possible system in which the transition from type I to type II for light holes might be observed.

Ji, G.↗
NASA NTRS1987

Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates

The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.

Reddy, U. K.↗
NASA NTRS1976

Phase transformation and stabilization of a high strength austenite

An investigation of the phase transformation and the austenite stabilization in a high strength austenite has been made. An Fe-29Ni-4.3Ti austenite age-hardened by gamma-prime (Ni3Ti) precipitates showed a further increase of strength after martensitic and reverse martensitic phase transformations. The stability of ausaged austenite as well as ausaged and transformation-strengthened austenite was improved significantly through an isothermal treatment at 500 C. The Ms temperature of the strengthened austenite was restored to nearly that of annealed austenite while the austenite was hardened to R(C) 41 through precipitation and phase transformations. The observed austenite stabilization is attributed to the formation of GP zones or short-range order of less than about 10A in size.

Jin, S.↗