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Huang, Bing

Publications and source records attributed to Huang, Bing.

Optimization Formulations for Storage Devices with Disjoint Operating Modes

Optimizing State of Charge for Storage Resources Storage of generated energy has existed as a contributing resource within the power sector for more than a century in the case of pumped hydro storage. Even though most regional transmission organizations/independent system operators do not currently optimize state of charge (SOC) for storage, the SOC is an essential aspect of the operating characteristics of storage. This paper investigates the impact on computational performance of optimizing storage with explicit representation of SOC. To investigate the model, the paper considers two contexts, stand-alone and large-scale. Analysis of the stand-alone context helps to explain why the combination of features in the storage model results in a difficult problem. Numerical results for large-scale test cases verify that new tighter valid inequalities can improve the computation compared with the standard model in the literature.

Business & Economics↗

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

CMOS integrated circuits↗