Engineering topics
Hu, Qing
Publications and source records attributed to Hu, Qing.
Efficient Third-Order Distributed Feedback Laser with Enhanced Beam Pattern
A third-order distributed feedback laser has an active medium disposed on a substrate as a linear array of segments having a series of periodically spaced interstices therebetween and a first conductive layer disposed on a surface of the active medium on each of the segments and along a strip from each of the segments to a conductive electrical contact pad for application of current along a path including the active medium. Upon application of a current through the active medium, the active medium functions as an optical waveguide, and there is established an alternating electric field, at a THz frequency, both in the active medium and emerging from the interstices. Spacing of adjacent segments is approximately half of a wavelength of the THz frequency in free space or an odd integral multiple thereof, so that the linear array has a coherence length greater than the length of the linear array.
Lens Coupled Quantum Cascade Laser
Terahertz quantum cascade (QC) devices are disclosed that can operate, e.g., in a range of about 1 THz to about 10 THz. In some embodiments, QC lasers are disclosed in which an optical element (e.g., a lens) is coupled to an output facet of the laser's active region to enhance coupling of the lasing radiation from the active region to an external environment. In other embodiments, terahertz amplifier and tunable terahertz QC lasers are disclosed.
Frequency Tunable Wire Lasers
The present invention provides frequency tunable solid-state radiation-generating devices, such as lasers and amplifiers, whose active medium has a size in at least one transverse dimension (e.g., its width) that is much smaller than the wavelength of radiation generated and/or amplified within the active medium. In such devices, a fraction of radiation travels as an evanescent propagating mode outside the active medium. It has been discovered that in such devices the radiation frequency can be tuned by the interaction of a tuning mechanism with the propagating evanescent mode.
Real-time, continuous-wave terahertz imaging using a microbolometer focal-plane array
The present invention generally provides a terahertz (THz) imaging system that includes a source for generating radiation (e.g., a quantum cascade laser) having one or more frequencies in a range of about 0.1 THz to about 10 THz, and a two-dimensional detector array comprising a plurality of radiation detecting elements that are capable of detecting radiation in that frequency range. An optical system directs radiation from the source to an object to be imaged. The detector array detects at least a portion of the radiation transmitted through the object (or reflected by the object) so as to form a THz image of that object.
Tuning a Tetrahertz Wire Laser
Tunable terahertz lasers are desirable in applications in sensing and spectroscopy because many biochemical species have strong spectral fingerprints at terahertz frequencies. Conventionally, the frequency of a laser is tuned in a similar manner to a stringed musical instrument, in which pitch is varied by changing the length of the string (the longitudinal component of the wave vector) and/ or its tension (the refractive index). However, such methods are difficult to implement in terahertz semiconductor lasers because of their poor outcoupling efficiencies. Here, we demonstrate a novel tuning mechanism based on a unique 'wire laser' device for which the transverse dimension w is much much less than lambda. Placing a movable object close to the wire laser manipulates a large fraction of the waveguided mode propagating outside the cavity, thereby tuning its resonant frequency. Continuous single-mode redshift and blueshift tuning is demonstrated for the same device by using either a dielectric or metallic movable object. In combination, this enables a frequency tuning of approximately equal to 137 GHz (3.6%) from a single laser device at approximately equal to 3.8 THz.
Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.
186 K Operation of Terahertz Quantum-Cascade Lasers Based on a Diagonal Design
Resonant-phonon terahertz quantum-cascade lasers operating up to a heat-sink temperature of 186 K are demonstrated. This record temperature performance is achieved based on a diagonal design, with the objective to increase the upper-state lifetime and therefore the gain at elevated temperatures. The increased diagonality also lowers the operating current densities by limiting the flow of parasitic leakage current. Quantitatively, the diagonality is characterized by a radiative oscillator strength that is smaller by a factor of two from the least of any previously published designs. At the lasing frequency of 3.9 THz, 63 mW of peak optical power was measured at 5 K, and approximately 5 mW could still be detected at 180 K.
Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides
Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers
Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.
1.9 THz Quantum-cascade Lasers with One-well Injector
We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (lambda approx. equal to 161 micrometers, planck's constant omega approx. equal to 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was approx. 140 A per square centimeters.
Distributed-feedback Terahertz Quantum-cascade Lasers with Laterally Corrugated Metal Waveguides
We report the demonstration of distributed-feedback terahertz quantum-cascade lasers based on a first-order grating fabricated via a lateral corrugation in a double-sided metal ridge waveguide. The phase of the facet reflection was precisely set by lithographically defined facets by dry etching. Single-mode emission was observed at low to moderate injection currents, although multimode emission was observed far beyond threshold owing to spatial hole burning. Finite-element simulations were used to calculate the modal and threshold characteristics for these devices, with results in good agreement with experiments.
Operation of Terahertz Quantum-cascade Lasers at 164 K in Pulsed Mode and at 117 K in Continuous-wave Mode
We report the demonstration of a terahertz quantum-cascade laser that operates up to 164 K in pulsed mode and 117 K in continuous-wave mod e at approximately 3.0 THz. The active region was based on a resonant -phonon depopulation scheme and a metal-metal waveguide was used for modal confinement. Copper to copper thermocompression wafer bonding w as used to fabricate the waveguide, which displayed improved thermal properties compared to a previous indium-gold bonding method.
Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing
A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
Micromachined Millimeter- and Submillimeter-wave SIS Heterodyne Receivers for Remote Sensing
This is a progress report for the second year of a NASA-sponsored project. The report discusses the design and fabrication of micromachined Superconductor Insulator Superconductor (SIS) heterodyne receivers with integrated tuning elements. These receivers tune out the functional capacitance at desired frequencies, resulting in less noise, lower temperatures and broader bandwidths. The report also discusses the design and fabrication of the first monolithic 3x3 focal-plane arrays for a frequency range of 170-210 GHz. Also addressed is the construction of a 9-channel bias and read-out system, as well as the redesign of the IF connections to reduce cross talk between SIS junctions, which become significant a frequency of 1.5 GHz IF. Uniformity of the junction arrays were measured and antenna beam patterns of several array elements under operating conditions also were measured. Finally, video and heterodyne responses of our focal-plane arrays were measured as well. Attached is a paper on: 'Development of a 170-210 GHz 3x3 micromachined SIS imaging array'.
A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions
A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
A Low-noise Micromachined Millimeter-Wave Heterodyne Mixer using Nb Superconducting Tunnel Junctions
A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes
We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.