Engineering topics

Hsu, G.

Publications and source records attributed to Hsu, G..

7 records

NASA NTRS1986

Fluidized-bed development at JPL

Silicon deposition on silicon seed particles by silane pyrolysis in a fluidized bed reactor (FBR) was investigated as a low cost, high throughput method to produce high purity polysilicon for solar cell applications. The emphasis of the research is fundamental understanding of fluidized bed silicon deposition. The mechanisms involved were modeled as a six-path process: heterogeneous deposition; homogeneous decomposition; coalescence; coagulation; scavenging; and chemical vapor deposition growth on fines.

Hsu, G.↗

NASA NTRS1984

Fines in fluidized bed silane pyrolysis

Silicon deposition on silicon seed particles by silane pyrolysis in a fluidized-bed reactor is investigated as a low-cost, high-throughput method to produce high-purity polysilicon for solar-cell applications. Studies of fines, particles 0.1-10 microns diam, initiated from homogeneous decomposition in the reactor were conducted using 2 and 6-in-diam fluidized beds. The studies show functional dependences of fines elutriation on silane feed concentration, temperature, gas velocity, and bubble size. The observation that the fines elutriation is generally below 10 percent of the silicon-in-silane feed is attributed to scavenging by large particles in an environment of less free space for homogeneous nucleation. Preliminary results suggest that, with proper conditions and distributor design, high-silane-concentration (over 50 percent SiH4 in H2) feed may be used.

Hsu, G.↗

NASA NTRS1984

Fluidized bed silicon deposition

The growth of silicon on seed particles from the pyrolysis of silane in a fluidized bed reactor (FBR) was studied. The grown particles were shown to be crystalline and to have a structure which has been interpreted to indicate growth by chemical vapor deposition as well as by the collection (scavenging) of silicon clusters on seed particle surfaces. Scanning electron microscopy was used to study the product morphology.

Hsu, G.↗

NASA NTRS1980

New technologies for solar energy silicon - Cost analysis of BCL process

New technologies for producing polysilicon are being developed to provide lower cost material for solar cells which convert sunlight into electricity. This article presents results for the BCL Process, which produces the solar-cell silicon by reduction of silicon tetrachloride with zinc vapor. Cost, sensitivity, and profitability analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon by the BCL Process. Profitability analysis indicates a sales price of $12.1-19.4 per kg of silicon (1980 dollars) at a 0-25 per cent DCF rate of return on investment after taxes. These results indicate good potential for meeting the goal of providing lower cost material for silicon solar cells.

Yaws, C. L.↗

NASA NTRS1978

Electricity from sunlight

The paper discusses a number of new unconventional processes proposed for the low-cost production of silicon for solar cells. Consideration is given to: (1) the Battelle process (Zn/SiCl4), (2) the Battelle process (SiI4), (3) the Silane process, (4) the Motorola process (SiF4/SiF2), (5) the Westinghouse process (Na/SiCl4), (6) the Dow Corning process (C/SiO2), (7) the AeroChem process (SiCl4/H atom), and the Stanford process (Na/SiF4). Preliminary results indicate that the conventional process and the SiI4 processes cannot meet the project goal of $10/kg by 1986. Preliminary cost evaluation results for the Zn/SiCl4 process are favorable.

Yaws, C. L.↗

NASA NTRS1977

Chemical Vapor Deposition of Silicon from Silane Pyrolysis

The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

Praturi, A. K.↗

NASA NTRS1977

Modeling of fluidized bed silicon deposition process

The model is intended for use as a means of improving fluidized bed reactor design and for the formulation of the research program in support of the contracts of Silicon Material Task for the development of the fluidized bed silicon deposition process. A computer program derived from the simple modeling is also described. Results of some sample calculations using the computer program are shown.

Kim, K.↗