Engineering topics

Hopkins, R. H.

Publications and source records attributed to Hopkins, R. H..

At least 19 records

NASA NTRS2016

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Singh, N. B.↗

NASA NTRS2016

Growth Mechanism of Nanowires: Ternary Chalcogenides

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Singh, N. B.↗

NASA NTRS1993

Growth of binary organic NLO crystals: m.NA-p.NA and m.NA-CNA system

Experiments were carried out to grow 3.Nitroaniline (m.NA) crystals doped with 4.Nitroaniline (p.NA) and 2.chloro 4.Nitroaniline (CNA). The measured undercooling for m.NA, p.NA, and CNA were 0.21 tm K, 0.23 tm K, and 0.35 tm K respectively, where tm represents the melting temperature of the pure component. Because of the crystals' large heat of fusion and large undercooling, it was not possible to grow good quality crystals with low thermal gradients. In the conventional two-zone Bridgman furnace we had to raise the temperature of the hot zone above the decomposition temperature of CNA, p.NA, and m.NA to achieve the desired thermal gradient. To avoid decomposition, we used an unconventional Bridgman furnace. Two immiscible liquids, silicone oil and ethylene glycol, were used to build a special two-zone Bridgman furnace. A temperature gradient of 18 K/cm was achieved without exceeding the decomposition temperature of the crystal. The binary crystals, m.NA-p.NA and m.NA-CNA, were grown in centimeter size in this furnace. X-ray and optical characterization showed good optical quality.

Singh, N. B.↗

NASA NTRS1992

Growth and characterization of lead bromide crystals

Lead(II) bromide was purified by a combination of directional freezing and zone-refining methods. Differential thermal analysis of the lead bromide showed that a destructive phase transformation occurs below the melting temperature. This transformation causes extensive cracking, making it very difficult to grow a large single crystal. Energy of phase transformation for pure lead bromide was determined to be 24.67 cal/g. To circumvent this limitation, crystals were doped by silver bromide which decreased the energy of phase transformation. The addition of silver helped in achieving the size, but enhanced the inhomogeneity in the crystal. The acoustic attenuation constant was almost identical for the pure and doped (below 3000 ppm) crystals.

Singh, N. B.↗

NASA NTRS1992

Effect of growth conditions on the quality of lead bromide crystals

Single crystals of pure and doped lead bromide were grown by the Bridgman method in different convective conditions. The convection level was varied by changing the thermal and solutal Rayleigh number. The homogeneity in refractive index, and hence the optical quality, was estimated by examining the optical distortion, birefringence interferograms, and laser scattering through the crystal. The optical quality of the crystal varied significantly with the variation of convection level during the crystal growth. The critical concentration of the solute was estimated for several values of growth velocity by numerical analysis at the thermal gradient of 20 K/cm.

Singh, N. B.↗

NASA NTRS1992

Thermodynamic reactivity, growth and characterization of mercurous halide crystals

Thermodynamic calculations were carried out for the Hg-X-O system (X = Cl, Br, I) to identify the potential sources of contamination and relative stability of oxides and oxy-halide phases. The effect of excess mercury vapor pressure on the optical quality of mercurous halide crystal was studied by growing several mercurous chloride crystals from mercury-rich composition. The optical quality of crystals was examined by birefringence interferometry and laser scattering studies. Crystals grown in slightly mercury-rich composition showed improved optical quality relative to stoichiometric crystals.

Singh, N. B.↗

NASA NTRS1987

Analysis of plastic deformation in silicon web crystals

Numerical calculation of 111-plane 110-line slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning (1958) and Jordan (1981) but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.

Spitznagel, J. A.↗

NASA NTRS1987

Advancements in silicon web technology

Low defect density silicon web crystals up to 7 cm wide are produced from systems whose thermal environments are designed for low stress conditions using computer techniques. During growth, the average silicon melt temperature, the lateral melt temperature distribution, and the melt level are each controlled by digital closed loop systems to maintain thermal steady state and to minimize the labor content of the process. Web solar cell efficiencies of 17.2 pct AM1 have been obtained in the laboratory while 15 pct efficiencies are common in pilot production.

Hopkins, R. H.↗

NASA NTRS1986

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.↗

NASA NTRS1986

Impurity effects in silicon for high efficiency solar cells

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Hopkins, R. H.↗

NASA NTRS1986

Effects of impurities on silicon solar-cell performance

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Hopkins, R. H.↗

NASA NTRS1985

Impurities in silicon solar cells

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Hopkins, R. H.↗

NASA NTRS1985

Advanced dendritic web growth development

A program to develop the technology of the silicon dendritic web ribbon growth process is examined. The effort is being concentrated on the area rate and quality requirements necessary to meet the JPL/DOE goals for terrestrial PV applications. Closed loop web growth system development and stress reduction for high area rate growth is considered.

Hopkins, R. H.↗

NASA NTRS1982

Large-area sheet task advanced dendritic web growth development

The computer code for calculating web temperature distribution was expanded to provide a graphics output in addition to numerical and punch card output. The new code was used to examine various modifications of the J419 configuration and, on the basis of the results, a new growth geometry was designed. Additionally, several mathematically defined temperature profiles were evaluated for the effects of the free boundary (growth front) on the thermal stress generation. Experimental growth runs were made with modified J419 configurations to complement the modeling work. A modified J435 configuration was evaluated.

Duncan, C. S.↗

NASA NTRS1982

Large-area sheet task advanced dendritic web growth development

The "discrete shield' temperature model was completed and verified. Modifications to the J419 low stress configuration were tested experimentally to evaluate effects on growth speed. A composite lid and shield configuration combining the low stress features of the J419 with the width limiting characteristics of the J98M3 was fabricated and tested in the N-furnace. Several long crystals were grown with width limited to about 3.3 cm and with melt replenishment, although the configuration is not yet optimized for steady state growth.

Duncan, C. S.↗

NASA NTRS1982

Large-area sheet task advanced dendritic web growth development

The thermal stress model was used to generate the design of a low stress lid and shield configuration, which was fabricated and tested experimentally. In preliminary tests, the New Experimental Web Growth Facility performed as designed, producing web on the first run. These experiments suggested desirable design modifications in the melt level sensing system to improve further its performance, and these are being implemented.

Duncan, C. S.↗

NASA NTRS1982

Large-area sheet task advanced dendritic web growth development

Thermal models were developed that accurately predict the thermally generated stresses in the web crystal which, if too high, cause the crystal to degenerate. The application of the modeling results to the design of low-stress experimental growth configurations will allow the growth of wider web crystals at higher growth velocities. A new experimental web growth machine was constructed. This facility includes all the features necessary for carrying out growth experiments under steady thermal conditions. Programmed growth initiation was developed to give reproducible crystal starts. Width control permits the growth of long ribbons at constant width. Melt level is controlled to 0.1 mm or better. Thus, the capability exists to grow long web crystals of constant width and thickness with little operator intervention, and web growth experiments can now be performed with growth variables controlled to a degree not previously possible.

Duncan, C. S.↗

NASA NTRS1982

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

Hopkins, R. H.↗