Engineering topics

Hoffmann, Axel

Publications and source records attributed to Hoffmann, Axel.

At least 91 records · Page 5

DOE OSTI2017

Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn

Here we observed and studied pinned uncompensated magnetization in an antiferromagnet using magnetoresistance measurements. For this, we developed antiferromagnet-ferromagnet spin valves (AFSVs) that consist of an antiferromagnetic layer and a ferromagnetic one, separated by a nonmagnetic conducting spacer. In an AFSV, the uncompensated magnetization in the antiferromagnet affects scattering of spin-polarized electrons giving rise to giant magnetoresitance (GMR). By measuring angular dependence of AFSVs' resistance, we detected pinned uncompensated magnetization responsible for the exchange bias effect in an antiferromagnet- only exchange bias system Cu/FeMn/Cu. The fact that GMR measured in this system persists up to 110 kOe indicates that the scattering occurs on strongly pinned uncompensated magnetic moments in FeMn. This strong pinning can be explained if this pinned uncompensated magnetization is a thermodynamically stable state and coupled to the antiferromagnetic order parameter. Finally, using the AFSV technique, we confirmed that the two interfaces between FeMn and Cu are magnetically different: The uncompensated magnetization is pinned only at the interface with the bottom Cu layer.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Terahertz emission from ultrafast spin and charge currents at a Rashba interface

Abstract: We demonstrate the efficient single-cycle THz emission from a Rashba interface, i.e., Ag/Bi, in a spintronic heterostructure. Different from the previously reported inversed spin Hall effect mechanism in bulk systems, the observed ultrafast spin-to-charge conversion in a 2D Rashba interface is due to the inversed Rashba-Edelstein effect.

Zhang, Qi↗

DOE OSTI2016

Insulating nanomagnets driven by spin torque

Magnetic insulators, such as yttrium iron garnet (Y 3 Fe 5 O 12 ), are ideal materials for ultra-low power spintronics applications due to their low energy dissipation and efficient spin current generation and transmission. Recently, it has been realized that spin dynamics can be driven very effectively in micrometer-sized Y 3 Fe 5 O 12 /Pt heterostructures by spin-Hall effects. We demonstrate here the excitation and detection of spin dynamics in Y 3 Fe 5 O 12 /Pt nanowires by spin-torque ferromagnetic resonance. The nanowires defined via electron-beam lithography are fabricated by conventional room temperature sputtering deposition on Gd 3 Ga 5 O 12 substrates and lift-off. We observe field-like and anti-damping-like torques acting on the magnetization precession, which are due to simultaneous excitation by Oersted fields and spin-Hall torques. The Y 3 Fe 5 O 12 /Pt nanowires are thoroughly examined over a wide frequency and power range. We observe a large change in the resonance field at high microwave powers, which is attributed to a decreasing effective magnetization due to microwave absorption. By comparing different nanowire widths, the importance of geometrical confinements for magnetization dynamics becomes evident. In conclusion, our results are the first stepping stones toward the realization of integrated magnonic logic devices based on insulators, where nanomagnets play an essential role.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Epitaxial patterning of nanometer-thick Y 3 Fe 5 O 12 films with low magnetic damping

Magnetic insulators such as yttrium iron garnet, Y 3 Fe 5 O 12 , with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and effcient spin current generation and transmission. We demonstrate reliable and effcient epitaxial growth and nanopatterning of Y 3 Fe 5 O 12 thin-film based nanostructures on insulating Gd 3 Ga 5 O 12 substrates. In particular, our fabrication process is compatible with conventional sputtering and liftoff, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Structural and magnetic properties indicate good qualities, in particular low magnetic damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing to ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhibits cross-over with the main mode upon varying the width of the wires. In conclusion, the non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y 3 Fe 5 O 12 nanostructures serve as the key functional component.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Perspective: Interface generation of spin-orbit torques

We present that most of the modern spintronics developments rely on the manipulation of magnetization states via electric currents, which started with the discovery of spin transfer torque effects 20 years ago. By now, it has been realized that spin-orbit coupling provides a particularly efficient pathway for generating spin torques from charge currents. At the same time, spin-orbit effects can be enhanced at interfaces, which opens up novel device concepts. Here, we discuss two examples of such interfacial spin-orbit torques, namely, systems with inherently two-dimensional materials and metallic bilayers with strong Rashba spin-orbit coupling at their interfaces. We show how ferromagnetic resonance excited by spin-orbit torques can provide information about the underlying mechanisms. In addition, this article provides a brief overview of recent developments with respect to interfacial spin-orbit torques and an outlook of still open questions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Direct observation of the skyrmion Hall effect

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultant skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe 12 O 19 bilayer where the BaFe 12 O 19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe 12 O 19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe 12 O 19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

In{sub x}Ga{sub 1–x}N/GaN single and multi quantum well (MQW) structures with x ≈ 0.13 were investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and luminescence. Clear evidence of unintentional indium incorporation into the nominal GaN barrier layers is found. The unintentional In content is found to be around 3%. Inhomogeneous distribution of In atoms occurs within the distinct quantum well (QW) layers, which is commonly described as statistical alloy fluctuation and leads to the characteristic S-shape temperature shift of emission energy. Furthermore, differences in emission energy between the first and the other QWs of a MQW stack are found experimentally. This effect is discussed with the help of model calculations and is assigned to differences in the confining potential due to unwanted indium incorporation for the upper QWs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Mobile Néel skyrmions at room temperature: status and future

Magnetic skyrmions are topologically protected spin textures that exhibit many fascinating features. As compared to the well-studied cryogenic Bloch skyrmions in bulk materials, we focus on the room-temperature Néel skyrmions in thin-film systems with an interfacial broken inversion symmetry in this article. Specifically, we show the stabilization, the creation, and the implementation of Néel skyrmions that are enabled by the electrical current-induced spin-orbit torques. Towards the nanoscale Néel skyrmions, we further discuss the challenges from both material optimization and imaging characterization perspectives.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Spin Vortex Resonance in Non-planar Ferromagnetic Dots

In planar structures, the vortex resonance frequency changes little as a function of an in-plane magnetic field as long as the vortex state persists. Altering the topography of the element leads to a vastly different dynamic response that arises due to the local vortex core confinement effect. In this work, we studied the magnetic excitations in non-planar ferromagnetic dots using a broadband microwave spectroscopy technique. Two distinct regimes of vortex gyration were detected depending on the vortex core position. The experimental results are in qualitative agreement with micromagnetic simulations.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Gyrotropic frequency control in ferromagnetic dots using a nanoscale vortex barrier

The vortex translational mode frequency is known to be only weakly dependent on the magnitude of an in-plane magnetic field (e.g. the vortex core position) for circular ferromagnetic dots. Here we demonstrated that the frequency-field dependence becomes discrete when a nanoscale vortex barrier is introduced in the dot structure. We found that the frequency is mostly defined by the outer diameter of the dot or the barrier size for the vortex core located outside or inside the barrier, correspondingly. The experimental results are in good agreement with the micromagnetic simulation.

Ding, Junjia↗

DOE OSTI2016

Spin valve with non-collinear magnetization configuration imprinted by a static magnetic field

Not Available

Lapa, Pavel N.↗

DOE OSTI2016

Generation of magnetic skyrmion bubbles by inhomogeneous spin Hall currents

Recent experiments have shown that magnetic skyrmion bubbles can be generated and injected at room temperature in thin films. In this study, we demonstrate, using micromagnetic modeling, that such skyrmions can be generated by an inhomogeneous spin Hall torque in the presence of Dzyaloshinskii-Moriya interactions (DMIs). In the experimental Ta-Co 20 Fe 60 B 20 thin films, the DMI is rather small; nevertheless, the skyrmion bubbles are stable, or at least metastable on observational time scales.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Spin Hall effects in metallic antiferromagnets – perspectives for future spinorbitronics

36 MATERIALS SCIENCE↗

DOE OSTI2016

Research update: Spin transfer torques in permalloy on monolayer MoS 2

We observe current induced spin transfertorque resonance in permalloy (Py) grown on monolayer MoS 2 . By passing rf current through the Py/MoS 2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS 2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Furthermore, our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Antiferromagnetic spin Seebeck effect.

We report on the observation of the spin Seebeck effect in antiferromagnetic MnF2. A device scale on-chip heater is deposited on a bilayer of MnF2 (110) (30nm)/Pt (4 nm) grown by molecular beam epitaxy on a MgF2(110) substrate. Using Pt as a spin detector layer, it is possible to measure the thermally generated spin current from MnF2 through the inverse spin Hall effect. The low temperature (2–80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin-flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9T) are applied parallel to the easy axis of the MnF2 thin film. When the magnetic field is applied perpendicular to the easy axis, the spin-flop transition is absent, as expected.

Wu, Stephen M.↗