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Hoenk, Michael E.

Publications and source records attributed to Hoenk, Michael E..

30 records · Page 2

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy

Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors

Curved-focal-plane arrays of back-illuminated silicon-based photodetectors are being developed. The basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (e.g., a photographic film or an array of photodetectors) conform to a curved focal surface, instead of following the customary practice of designing the optics to project an image onto a flat focal surface. Eyes are natural examples of optical systems that have curved focal surfaces on which image sensors (retinas) are located. One prior approach to implementation of this concept involves the use of curved-input-surface microchannel plates as arrays of photodetectors. In comparison with microchannel plates, these curved-focal-plane arrays would weigh less, operate at much lower voltages, and consume less power. It should also be possible to fabricate the proposed devices at lower cost. It would be possible to fabricate an array of photodetectors and readout circuitry in the form of a very-large-scale integrated (VLSI) circuit on a curved focal surface, but it would be difficult and expensive to do so. In a simple and inexpensive alternate approach, a device (see figure) would have (1) a curved back surface, onto which light would be focused; and (2) a flat front surface, on which VLSI circuitry would be fabricated by techniques that are well established for flat surfaces. The device would be made from ultrapure silicon, in which it is possible to form high-resistivity, thick photodetectors that are fully depleted through their thicknesses. (As used here, "thick means having a thickness between a fraction of a millimeter and a few millimeters.) The back surface would be polished to the curvature of the focal surface of the intended application. To enable the collection of charge carriers excited by photons near the back surface or in the bulk of the device, it would be necessary to form a transparent or semitransparent back-surface electrode, possibly by delta doping. [Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac function (impulse function): the dopant is concentrated in a very thin layer - nominally, a single atomic layer.]

Nikzad, Shouleh

Delta-doped CCD's as low-energy particle detectors and imagers

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.

Nikzad, Shouleh

Micro Weather Station

Improved in situ meteorological measurements in the troposphere and stratosphere are needed for studies of weather and climate, both as a primary data source and as validation for remote sensing instruments. Following the initial development and successful flight validation of the surface acoustic wave (SAW) hygrometer, the micro weather station program was directed toward the development of an integrated instrument, capable of accurate, in situ profiling of the troposphere, and small enough to fly on a radiosonde balloon for direct comparison with standard radiosondes. On April 23, 1998, working with Frank Schmidlin and Bob Olson of Wallops Island Flight Facility, we flew our instrument in a dual payload experiment, for validation and direct comparison with a Vaisala radiosonde. During that flight, the SAW dewpoint hygrometer measured frostpoint down to -76T at 44,000 feet. Using a laptop computer in radio contact with the balloon, we monitored data in real time, issued the cutdown command, and recovered the payload less than an hour after landing in White Sands Missile Range, 50 miles from the launch site in Hatch, New Mexico. Future flights will extend the intercomparison, and attempt to obtain in situ meteorological profiles from the surface through the tropopause. The SAW hygrometer was successfully deployed on the NASA DC8 as part of NASA's Third Convection and Moisture Experiment (CAMEX-3) during August and September, 1998. This field campaign was devoted to the study of hurricane tracking and intensification using NASA-funded aircraft. In situ humidity data from the SAW hygrometer are currently being analyzed and compared with data from other instruments on the DC8 and ER2 aircraft. Additional information is contained in the original.

Hoenk, Michael E.

Fast, high sensitivity dewpoint hygrometer

A dewpoint/frostpoint hygrometer that uses a surface moisture-sensitive sensor as part of an RF oscillator circuit with feedback control of the sensor temperature to maintain equilibrium at the sensor surface between ambient water vapor and condensed water/ice. The invention is preferably implemented using a surface acoustic wave (SAW) device in an RF oscillator circuit configured to generate a condensation-dependent output signal, a temperature sensor to measure the temperature of the SAW device and to distinguish between condensation-dependent and temperature-dependent signals, a temperature regulating device to control the temperature of the SAW device, and a feedback control system configured to keep the condensation-dependent signal nearly constant over time in the presence of time-varying humidity, corrected for temperature. The effect of this response is to heat or cool the surface moisture-sensitive device, which shifts the equilibrium with respect to evaporation and condensation at the surface of the device. The equilibrium temperature under feedback control is a measure of dewpoint or frostpoint.

Hoenk, Michael E.

Growth Of Delta-Doped Layer On Silicon CCD

Response to ultraviolet light enhanced. Back-side-illuminated silicon charge-coupled device fabricated exhibiting nearly 100 percent internal quantum efficiency in near ultraviolet, by using molecular beam epitaxy to grow thin crystalline-silicon layer containing high concentration of boron (p-type dopant). By confining dopant atoms to one or few atomic layers in silicon lattice, concentration-vs.-depth profile made to resemble Dirac delta function, and resulting silicon layer said to be "delta-doped."

Hoenk, Michael E.

Micro Weather Stations for Mars

A global network of weather stations will be needed to characterize the near-surface environment on Mars. Here, we review the scientific and measurement objectives of this network. We also show how these objectives can be met within the cost-constrained Mars Surveyor Program by augmenting the Mars Pathfinder-derived landers with large numbers of very small (less than 5 liter), low-mass (less than 5 kg), low-power, low-cost Mini-meteorological stations. Each station would include instruments for measuring atmospheric. pressures, temperatures, wind velocities, humidity, and airborne dust abundance. They would also include a data handling, telemetry, power, atmospheric entry, and deployment systems in a rugged package capable of direct entry and a high-impact landing. In this paper, we describe these systems and summarize the data-taking strategies and data volumes needed to achieve the surface meteorology objectives for Mars.

Crisp, David

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Hoenk, Michael E.

Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

Hoenk, Michael E.

Small Inertial Measurement Units- Sources of Error and Limitations on Accuracy

Inertial measurement units (IMUs) with very low mass and power can be manufactured using micromachined accelerometers and gyroscopes. Six degree of freedom packages which require a few watts of power and have less than a kg of mass are available commercially, greatly expanding the potential applications of IMUs in guidance and navigation. Recent advances in small sensor design and fabrication have pushed the performance limits of these small devices. However, the limitations on the precision of small IMUs are not entirely due to the performance of the individual sensors.

Hoenk, Michael E.

Silicon Holder For Molecular-Beam Epitaxy

Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

Hoenk, Michael E.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Hoenk, Michael E.