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Hoenk, M.

Publications and source records attributed to Hoenk, M..

13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

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