Engineering topics
Publications and source records attributed to Hill, D. M..
High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.
Delivery tube transfers molten silicon between high-temperature vessel. Transport tube is sealed to delivery vessel and receiving vessel and slanted so gravity moves molten silicon. Contamination is prevented since molten silicon only contacts quartz delivery tube.
Drop length necessary to convert molten silicon to shot reduced by proposed new process. Conversion of silicon from powder or chunks to shot often simplifies processing. Shot is more easily handled in most processing equipment. Drops of liquid silicon fall through protective cloud of argon, then through rapidly cooling bath of methanol, where they quickly turn into solid shot.
The operation of a silicon production technique was demonstrated. The essentials of the method comprise chemical vapor deposition of silicon, by hydrogen reduction of chlorosilanes, on the inside of a quartz reaction vessel having large internal surface area. The system was designed to allow successive deposition-melting cycles, with silicon removal being accomplished by discharging the molten silicon. The liquid product would be suitable for transfer to a crystal growth process, casting into solid form, or production of shots. A scaled-down prototype reactor demonstrated single pass conversion efficiency of 20 percent and deposition rates and energy consumption better than conventional Siemens reactors, via deposition rates of 365 microns/hr. and electrical consumption of 35 Kwhr/kg of silicon produced.
The low cost production of silicon by deposition of silicon from a hydrogen/chlorosilane mixture is described. Reactor design, reaction vessel support systems (physical support, power control and heaters, and temperature monitoring systems) and operation of the system are reviewed. Testing of four silicon deposition reactors is described, and test data and consequently derived data are given. An 18% conversion of trichlorosilane to silicon was achieved, but average conversion rates were lower than predicted due to incomplete removal of byproduct gases for recycling and silicon oxide/silicon polymer plugging of the gas outlet. Increasing the number of baffles inside the reaction vessel improved the conversion rate. Plans for further design and process improvements to correct the problems encountered are outlined.
A system to combine silicon formation, by hydrogen reduction of trichlorosilane, with the capability to replenish a crystal growth system is described. A variety of process parameters to allow sizing and specification of gas handling system components was estimated.