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Hensley, Dale K.

Publications and source records attributed to Hensley, Dale K..

6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Advanced Design and 3D Printing Strategies With Alginate‐Nanoclay Nanocomposites: From Microstructure to Bioprinting

Nanocomposites made from alginate and nanoclay are extensively applied for diverse biomedical applications. However, the lack of a clear understanding of the interactions between alginate and nanoclay makes it difficult to rationally design the nanocomposites for different material extrusion-based 3D bioprinting strategies. Here, a combined analytical model is proposed to accurately predict the interaction mechanisms between alginate and nanoclay through small-angle neutron scattering. These mechanisms are summarized into a phase diagram that can guide the design of alginate-nanoclay nanocomposites for different bioprinting applications. The rheological properties of various nanocomposites are measured to validate the proposed interaction mechanisms at the macroscale. Accordingly, three representative extrusion-based bioprinting strategies are linked with the nanocomposite design and applied to freeform fabricate complex structures. In conclusion, a roadmap is summarized to bridge the gap between biomaterial design and bioprinting processes, enabling the rapid and rational selection of biomaterial formula based on available 3D printing methods, and vice versa.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Chemical specificity in polyzwitterion-polyelectrolyte coacervates: polycations vs polyanions

Aqueous solutions containing polyzwitterions and polyelectrolytes were studied to probe the effects of chemical specificity on the complexation among different types of chains and resulting liquid–liquid phase separation (coacervation). Two kinds of blends were studied. A polyzwitterion, poly(sulfobetaine methacrylate) (PSBMA), was blended with either (1) a polycation, poly(diallydimethylammonium chloride) (PDADMAC), or (2) a polyanion, sodium poly(styrene sulphonate) (NaPSS). Coacervation was observed in both blends after equilibration, while the freshly prepared blend solutions exhibited distinct behavior dependent on the mixing protocols. Mixing solutions of the polyzwitterions and the polycations led to coacervation almost instantaneously. In contrast, the blends containing the same polyzwitterions and the polyanions exhibited no such coacervation by following the same mixing protocol. However, blends prepared after dissolving a solid mixture containing the same polyzwitterions and the polyanions in water exhibited coacervation. Based on the small-angle X-ray scattering (SAXS), cryo-electron microscopy, and rheology measurements, complexation and coacervation in the polyzwitterion-polyelectrolyte blends is rationalized in terms of the entropy change associated with reorganization of solvent (water), which appears to be larger in the polyzwitterion-polycation case in comparison with the polyzwitterion-polyanion blends. These results highlight the importance of chemical specificity and mixing protocols leading to metastable structures in designing a new class of materials based on macromolecular complexation of polyzwitterions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Qin, Yuan↗
DOE OSTI2023

Rapid Cryogenic Electrical Characterization of Materials and Devices Using Gifford-McMahon Cryocoolers

Thin-film heterostructures are necessary building blocks for superconducting and phononic quantum computing devices. Many new generations of quantum hardware demand extensive materials research to optimize performances at cryogenic temperatures (below 10 K). Here, we demonstrate compact cryogenic measurement systems capable of reaching sub-10K temperatures in less than three hours with the ability to measure AC/DC resistance and dielectric properties of thin-film materials. Our platform utilizes Gifford-McMahon (GM) cryocoolers as effective tools for providing high throughput cooling-warming cycles. We successfully used the GM-based measurement systems to measure 1) the superconducting transition temperature for Nb thin films (T c ~7.8 K), and 2) the temperature dependence of the dielectric constant in SiO 2 thin films down to 10 K. The fast electrical characterization feedback will be critical in developing robust materials and components for cryogenic computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗