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Henderson, H. T.

Publications and source records attributed to Henderson, H. T..

A Novel Silicon Micromachined Integrated MCM Thermal Management System

This research concerned the development of a novel porous wick, fabricated totally out of silicon, using state-of-the-art MEMS technology. A comprehensive summary of results, as well as additional fabrication details, can be found in the following three documents located in the attached Appendices: A) Selected pages and excerpts from Year 2 progress report of the principal NASA Grant awarded from NASA Lewis Research Center, Grant Number NAG3-1706 entitled "A Novel Silicon Nficromachined Integrated MCM Thermal Management System" submitted to NASA LRC on 4/4/98. B) Selected viewgraphs from the joint NASA, TEES, and UC meeting held at the University of Cincinnati on April 24, 1998. C) Pre-print of the paper entitled "Coherent Macro Porous Silicon as a Wick Structure in an Integrated Nficrofluidic Two-Phase Cooling System" to be presented September 20-25, 1998 at the SPIE conference held in Santa Clara, Ca. To summarize,. nearly all of the proposed work was successfully accomplished (albeit a 3-month time extension was required), proving that micromachining can indeed be used to fabricate porous silicon wick structures with precise hole sizes and patterning control, thus permitting a substantial improvement in future wick designs. In addition, the appropriate range of thermal conductivities of the porous samples were theoretically predicted (see Appendix A). Although not part of the scope of work, the permeability of the test samples were measured (see results sections of Appendices B and C).

Kazmierczak, M. J.↗

A Novel Silicon Micromachined Integrated MCM Thermal Management System

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Kazmierczak, M. J.↗

Liquid metal micro heat pipes for space radiator applications

Micromachining is a chemical means of etching three-dimensional structures, typically in single-crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (micro electro mechanical systems), where in addition to the ordinary two dimensional (planar) microelectronics, it is possible to build three-dimensional micromotors, electrically-actuated microvalves, hydraulic systems, and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor microfabrication. The University of Cincinnati group in collaboration with NASA Lewis formed micro heat pipes in silicon by the above techniques. Work is ongoing at a modest level, but several essential bonding and packaging techniques have been recently developed. Currently, we have constructed and filled water/silicon micro heat pipes. Preliminary thermal tests of arrays of 125 micro heat pipes etched in a 1 inch x 1 inch x 250 micron silicon wafer have been completed. These pipes are instrumented with extremely small P-N junctions to measure their effective conductivity and their maximum operating power. A relatively simple one-dimensional model has been developed in order to predict micro heat pipes' operating characteristics. This information can be used to optimize micro heat pipe design with respect to length, hydraulic diameter, and number of pipes. Work is progressing on the fabrication of liquid-metal micro heat pipes. In order to be compatible with liquid metal (sodium or potassium), the inside of the micro heat pipes will be coated with a refractory metal (such as tungsten, molybdenum, or titanium).

Gerner, F. M.↗

Advances in microsensor development for gas and flow measurement in space power and propulsion systems

Emerging microelectromechanical sculpturing technology is presently extended, in conjunction with the use of deep semiconductor impurities having extreme flow sensitivities, small masses for shortest time response, and unconventional electrode schemes for elevated-temperature operation, for rocket-engine fuel flow sensing tasks. The radiation component of heat transfer is negligible, so that the device operates on the basis of conduction and convection loss.

Henderson, H. T.↗

Microtronic Flow Transducer

Novel microelectronic airflow and gas-flow transducer developed. Has no moving parts and constructed by use of variation on ordinary technology for processing of planar silicon microelectronics, where hundreds or thousands of identical devices concurrently produced on single chip as easily as can one. Gas-flow transducer based upon integrated Wheatstone bridge in silicon chip. Legs doped with gold and isolated thermally by etching away surrounding material (except corners). Because of small size, sensitivity, and good directional capability of new transducer, numerous potential applications in measurement of vortexes, flows in inlets to pipes, and other complicated flows.

Sundberg, Gale R.↗

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗

Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Kapoor, A. K.↗

A new planar injection-gated bulk switching device based upon deep impurity trapping

Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.

Kapoor, A. K.↗

Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes

Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.

Mantha, B.↗