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Heinbockel, J. H.

Publications and source records attributed to Heinbockel, J. H..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Analysis of the physical atomic forces between noble gas atoms, alkali ions and halogen ions

The physical forces between atoms and molecules are important in a number of processes of practical importance, including line broadening in radiative processes, gas and crystal properties, adhesion, and thin films. The components of the physical forces between noble gas atoms, alkali ions, and halogen ions are analyzed and a data base for the dispersion forces is developed from the literature based on evaluations with the harmonic oscillator dispersion model for higher order coefficients. The Zener model of the repulsive core is used in the context of the recent asymptotic wave functions of Handler and Smith; and an effective ionization potential within the Handler and Smith wave functions is defined to analyze the two body potential data of Waldman and Gordon, the alkali-halide molecular data, and the noble gas crystal and salt crystal data. A satisfactory global fit to this molecular and crystal data is then reproduced by the model to within several percent. Surface potentials are evaluated for noble gas atoms on noble gas and salt crystal surfaces with surface tension neglected. Within this context, the noble gas surface potentials on noble gas and salt crystals are considered to be accurate to within several percent.

Wilson, J. W.↗
NASA NTRS1986

Finite size corrections to Madelung number

It is customary in the study of ionic crystals to assume that the ions are point charges at their respective lattice sites; the corresponding electrostatic energy of one such ion is reducible to Madelung's form, where the Madelung number has a value of 1.7467. This paper considers the modifications in the electrostatic energy when the atomic finite size is treated in more detail. The results are tabulated as a direct correction to Madelung's number for alkali halide cubic crystals.

Wilson, J. W.↗
NASA NTRS1985

Refined potentials for rare gas atom adsorption on rare gas and alkali-halide surfaces

The utilization of models of interatomic potential for physical interaction to estimate the long range attractive potential for rare gases and ions is discussed. The long range attractive force is calculated in terms of the atomic dispersion properties. A data base of atomic dispersion parameters for rare gas atoms, alkali ion, and halogen ions is applied to the study of the repulsive core; the procedure for evaluating the repulsive core of ion interactions is described. The interaction of rare gas atoms on ideal rare gas solid and alkali-halide surfaces is analyzed; zero coverage absorption potentials are derived.

Wilson, J. W.↗
NASA NTRS1985

A method for analysis of blackbody diatomic-triatomic lasers

A formalism is developed for analysis of performance of direct blackbody and blackbody transfer lasers. Application to the CO/CO2 system is made. Three cases are treated: (1) Photoexcited triatomic laser; (2) Photoexcited diatomic-triatomic laser; and (3) Photoexcited diatomic mixing triatomic laser. Each is treated in a transverse flow geometry as illustrated. It is seen from the analysis that the mixing laser configuration has many advantages in that CO can achieve high excitation densities so that high power can be achieved on a relatively small scale.

Wilson, J. W.↗
NASA NTRS1983

A potential-energy scaling model to simulate the initial stages of thin-film growth

A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.

Heinbockel, J. H.↗
NASA NTRS1983

A potential energy scaling Monte Carlo simulation of thin film nucleation and growth

The initial growth of thin Ge fims on the (100) surface of an Fe substrate is investigated theoretically by means of Monte Carlo simulations based on a potential-energy-scaling technique. The substrate is modeled as a 20 x 20-square array with periodic boundary conditions, as described by Heinbockel et al. (1983), and the movement of surface atoms under the influence of the substrate interaction potential and the lateral interaction of neighboring atoms is explored via continuous updating (on the time scale of single events) of the potential energy at each site in the array. Results for the clustering of nine dispersed atoms over 1.0 s at 600 K and for deposition at 5 x 10 to the -14th/sq cm s over 2.0 s at 500 K are presented graphically.

Outlaw, R. A.↗
NASA NTRS1982

Modeling of thin film GaAs growth

A potential scaling Monte Carlo model of crystal growth is developed. The model is a modification of the solid-on-solid method for studying crystal growth in that potentials at surface sites are continuously updated on a time scale reflecting the surface events of migration, incorporation and evaporation. The model allows for B on A type of crystal growth and lattice disregistry by the assignment of potential values at various surface sites. The surface adatoms are periodically assigned a random energy from a Boltzmann distribution and this energy determines whether the adatoms evaporate, migrate or remain stationary during the sampling interval. For each addition or migration of an adatom, the surface potentials are adjusted to reflect the adsorption, migration or desorption potential changes.

Heinbockel, J. H.↗
NASA NTRS1982

Modeling of thin-film GaAs growth

A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms in a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative.

Heinbockel, J. H.↗
NASA NTRS1981

Modeling of thin-film GaAs growth

A solid Monte Carlo model is constructed for the simulation of crystal growth. The model assumes thermally accommodated adatoms impinge upon the surface during a delta time interval. The surface adatoms are assigned a random energy from a Boltzmann distribution, and this energy determines whether the adatoms evaporate, migrate, or remain stationary during the delta time interval. For each addition or migration of an adatom, potential wells are adjusted to reflect the absorption, migration, or desorption potential changes.

Heinbockel, J. H.↗
NASA NTRS1981

Modeling of thin-film GaAs growth

Efforts to produce a Monte Carlo computer program for the analysis of crystal growth are briefly discussed. A literature survey was conducted of articles relating to the subject. A list of references reviewed is presented.

Heinbockel, J. H.↗
NASA NTRS1981

A thermochemical model of radiation damage and annealing applied to GaAs solar cells

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Conway, E. J.↗
NASA NTRS1980

Gallium arsenide (GaAs) solar cell modeling studies

Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

Heinbockel, J. H.↗
NASA NTRS1980

GaAs solar cells for space applications

GaAs solar cells offer substantial advantages for space photovoltaic power over Si solar cells in the areas of efficiency, elevated temperature operation, and radiation damage stability. A mission cost comparison is made for GaAs and Si solar cells. For Si cell arrays, the total mission cost is found to be a minimum for a solar concentration of 2.9. For GaAs, modes of operation and construction are investigated. Modes having lower mission costs than the minimum Si mission cost are defined. These include higher concentrations, lightweight cells, and simultaneous power generation and annealing. The technological progress necessary for GaAs to operate in these modes is identified.

Conway, E. J.↗
NASA NTRS1980

Simultaneous radiation damage and annealing of GaAs solar cells

In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.

Heinbockel, J. H.↗
NASA NTRS1980

High temperature properties of GaAlAs/GaAs heteroface solar cells

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

Walker, G. H.↗
NASA NTRS1979

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

Heinbockel, J. H.↗
NASA NTRS1978

Long-term radiation effects on GaAs solar cell characteristics

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

Heinbockel, J. H.↗