High-field transport properties of InAs(x)P(1-x)/InP (x = 0.3-1.0) modulation doped heterostructures at 300 and 77 K
Detailed measurements at 300 and 77 K have been made of the high-field transport properties of pseudomorphic InAsP/InP modulation-doped heterostructures grown by low-pressure organometallic CVD. The high-field channel velocities are comparable to or better than that of InGaAs/InAlAs heterostructures, and the transport properties of InAs/InP heterostucture suggest that carriers remain confined in the channel even at high fields.