Engineering topics

Hart, R. E., Jr.

Publications and source records attributed to Hart, R. E., Jr..

31 records · Page 2

NASA NTRS1982

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Curtis, H. B.↗

NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗

NASA NTRS1981

Comparative radiation testing of solar cells for the shuttle power extension package

The Power Extension Package (PEP) is the prime focus of a development program to produce low cost solar cells. The PEP is a 32 kilowatt flexible substrate, retrievable, solar array system for use on the Space Shuttle. Solar cell cost will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The cost goal is to produce cells below $30 per watt. Two and ten ohm-cm silicon cells were investigated. This paper describes a unique radiation damage test and side-by-side comparison of candidate cell types with pre-and post-irradiation airplane calibration of outer space short-circuit current.

Baraona, C. R.↗

NASA NTRS1980

GaAs homojunction solar cell development

The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

Flood, D. J.↗

NASA NTRS1979

Temperature and intensity dependence of the performance of an electron-irradiated (AlGa)As/GaAs solar cell

The performance of a Hughes, liquid-phase epitaxial 2 centimeter-by-2 centimeter, (AlGa)As/GaAs solar cell was measured before and after irradiations with 1 MeV electrons to fluences of 1 x 10 to the 16th power electrons/sq cm. The temperature dependence of performance was measured over the temperature range 135 to 415 K at each fluence level. In addition, temperature dependences were measured at five intensity levels from 137 to 2.57 mW/sq cm before irradiation and after a fluence of 1 x 10 to the 16th power electrons/sq cm. For the intermediate fluences, performance was measured as a function of intensity at 298 K only.

Swartz, C. K.↗

NASA NTRS1974

The multiple junction edge illuminated solar cell

The multiple junction edge illuminated solar cell (M-J Cell) was devised for high voltage, low current applications. Devices to be flight-tested in early 1974 with 96 series-connected PNN+ junctions in a 2 cm x 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J Cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm-cm silicon are presented and problem areas are discussed. An additional potential application of the M-J Cell lies in utilization of its high-intensity performance that has been demonstrated at levels in excess of 100 AMO suns.

Sater, B. L.↗

NASA NTRS1973

The multiple junction edge illuminated solar cell

The multiple junction edge illuminated solar cell was devised for high voltage low current applications. Devices to be flight tested in early 1974 with 96 series connected PNN+ junctions in a 2 cm X 2.3 cm size deliver 36 volts at 1 milliampere. Test data of M-J cells fabricated with resistivities of 10, 50, 100, 200, 450, and 1000 ohm cm silicon are presented and problem areas are discussed. An additional potential application of the M-J cell lies in ultilization of its high intensity performance that has been demonstrated at levels in excess of 100 AMO suns.

Sater, B. I.↗

NASA NTRS1970