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Hao, Shiqiang

Publications and source records attributed to Hao, Shiqiang.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Thermoelectric Performance of the 2D Bi 2 Si 2 Te 6 Semiconductor

Bi 2 Si 2 Te 6 , a 2D compound, is a direct band gap semiconductor with an optical band gap of 0.25 eV, and is a promising thermoelectric material. Single-phase Bi 2 Si 2 Te 6 is prepared by a scalable ball-milling and annealing process and the highly densified polycrystalline samples are prepared by spark plasma sintering. Bi 2 Si 2 Te 6 shows a p-type semiconductor transport behavior and exhibits an intrinsically low lattice thermal conductivity of ~0.48 Wm -1 K -1 (cross-plane) at 573 K. The first-principles density functional theory calculations indicate that such low lattice thermal conductivity is derived from the interactions between acoustic phonons and low-lying optical phonons, local vibrations of Bi, the low Debye temperature and strong anharmonicity result from the unique 2D crystal structure and metavalent bonding of Bi 2 Si 2 Te 6 . The Bi 2 Si 2 Te 6 exhibits an optimal figure of merit ZT of ~0.51 at 623 K, which can be further enhanced by the substitution of Bi with Pb. Pb doping leads to a large increase in power factor S 2 σ, from ~4.0 μWcm -1 K- 2 of Bi 2 Si 2 Te 6 to ~8.0 μWcm -1 K -2 of Bi 1.98 Pb 0.02 Si 2 Te 6 at 775 K, owing to the increase in carrier concentration. Moreover, Pb doping induces a further reduction in the lattice thermal conductivity to ~0.38 Wm -1 K -1 (cross-plane) at 623 K in Bi 1.98 Pb 0.02 Si 2 Te 6 ,. The simultaneous optimization of the power factor and lattice thermal conductivity achieves a peak ZT of ~0.90 at 723 K and a high average ZT of ~0.66 at 400–773 K in Bi 1.98 Pb 0.02 Si 2 Te 6 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optical phonon dominated heat transport: A first-principles thermal conductivity study of BaSn 2

Acoustic phonons with long mean free paths have long been believed to control the lattice thermal conductivity κ L in solids dominantly. In this study, however, we demonstrate an optical phonon dominated κ L in BaSnS 2 . By solving the Peierls-Boltzmann transport equation, we predict a low diagonal lattice thermal conductivity κ L (D) of 0.34 W m -1 K -1 at 850 K, which is less than half the κ L (D) of SnS at the same temperature. Further calculations following the Allen-Feldman model suggest the additional off-diagonal lattice thermal conductivity κ L (OD) contributed by wavelike tunneling phonons. The κ L (OD) becomes pronounced at the high temperature ( 0.17 W m -1 K -1 at 850 K) and leads to a deviation of the temperature dependence of κ L from T -1 to T -0.76 , suggesting the potential lattice anharmonicity in BaSnS 2 . Further analyses indicate BaSnS 2 has over 68% of κ L contributed by optical phonons. We show this uncommon optical phonon dominated κ L is due to the relatively high group velocities of optical phonons in BaSnS 2 . The phonon mode visualization suggests these relatively high-velocity optical phonons correspond to the antiphase vibrations in BaSnS 2 monolayers, which is originated from the unique permutation of SnS 3 tetrahedra. Finally, by investigating the mode-resolved group velocity, relaxation time, and Grüneisen parameter, we attribute the intrinsic low κ L of BaSnS 2 to the soft lattice and the relatively high lattice anharmonicity induced by the Ba-S weak bonding and Sn(II) lone-pair electrons. Our study explicitly analyzes the microscopic mechanism of optical phonon dominated heat transport in BaSnS 2 and suggests it worthy of further experimental studies as an intrinsic low-κ L material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

Although Ga doping can weaken the electron phonon coupling in n-type PbTe, Ga-doped PbTe has a relatively low carrier concentration (n) and high lattice thermal conductivity (κ lat ), resulting in a lower figure of merit (ZT) compared with those of other top-performing n-type PbTe-based thermoelectric materials. Herein, we report the extraordinary role of Zn in enhancing the thermoelectric performance of Ga-doped PbTe. It is discovered that Zn can simultaneously improve the electronic transport properties and decrease the κlat of Ga-doped PbTe, thereby affording a record high ZT avg ~ 1.26 at 400–873 K, with a maximum ZT value of 1.55 at 723 K. The isoelectronic substitution of Zn for Pb in Ga-doped PbTe increases the electrical conductivity and n by inducing the nucleation and growth of Ga 2 Te 3 in the second phase. The formation of Ga 2 Te 3 results in nonstoichiometry and Te deficiency in the PbTe matrix, which increases the number of electron carriers. Additionally, discordant Zn and Ga atoms with displacing off-center from the ideal octahedral positions, as well as Ga 2 Te 3 nanocrystals ranging from 30 to 200 nm coherently embedded into the PbTe matrix effectively weaken the phonon modes and scatter heat-carrying phonons, resulting in a significant reduction in κ lat .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Broadband light emitting zero-dimensional antimony and bismuth-based hybrid halides with diverse structures

Low-dimensional organic–inorganic metal halides have recently attracted extensive attention because of their various structures and distinguished photoelectric properties. Herein, we report a series of new zero-dimensional organic–inorganic hybrid metal halides: (TMEDA) 3 Bi 2 Cl 12 ·H 2 O, (TMEDA) 3 Bi 2 Br 12 ·H 2 O, (TMEDA) 3 Sb 2 Br 12 ·H 2 O, and (TMEDA) 5 Sb 6 Cl 28 ·2H 2 O [TMEDA = N,N,N'·trimethylethylenediamine]. (TMEDA) 3 M 2 X 12 ·H 2 O (M = Bi or Sb, X = Cl or Br) crystallizes in the monoclinic space group P2 1 /n, and (TMEDA) 5 Sb 6 Cl 28 ·2H 2 O crystallizes in the orthorhombic space group Pnma. (TMEDA) 3 M 2 X 12 possesses a zero-dimensional structure with the metal halide ions of [MBr 6 ] 3- isolated by the organic TMEDA 2+ cations. Interestingly, the (TMEDA) 5 Sb 6 Cl 28 ·2H 2 O structure consists of a combination of corner-connected octahedra [Sb 4 Cl 18 ] 6- and edge-shared [Sb 2 Cl 10 ] 4- , which is quite rare. The light emission of all these compounds was measured, and (TMEDA) 3 Sb 2 Br 12 ·H 2 O exhibits the most intense luminescence. Upon 400 nm ultraviolet light excitation, (TMEDA) 3 Sb 2 Br 12 ·H 2 O exhibited strong broadband yellow emission centered at 625 nm with a full-width at half-maximum of ~150 nm originating from self-trapped excitons. In conclusion, this work suggests the possibility of new types of hybrid halides by introducing different metal centers and probing the structural evolution and photoluminescent properties, serving as a reference for the relationship between structure and luminescent performance and demonstrating their potential use as phosphors in light-emitting diodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Structure Tuning, Strong Second Harmonic Generation Response, and High Optical Stability of the Polar Semiconductors Na 1- x K x AsQ 2

We report the mixed cation compounds Na 1-x K x AsSe 2 (x = 0.8, 0.65, 0.5) and Na 0.1 K 0.9 AsS 2 crystallize in the polar noncentrosymmetric space group Cc. The AAsQ(2) (A = alkali metals, Q = S, Se) family features one-dimensional (1D) 1 / ∞ [AQ 2 - ] chains comprising corner-sharing pyramidal AQ 3 units in which the packing of these chains is dependent on the alkali metals. The parallel 1 / ∞ [AQ(2) - ] chains interact via short As ∙∙∙Se contacts, which increase in length when the fraction of K atoms is increased. The increase in the As ∙∙∙Se interchain distance increases the band gap from 1.75 eV in γ-NaAsSe 2 to 2.01 eV in Na 0.35 K 0.65 AsSe 2 , 2.07 eV in Na 0.2 K 0.8 AsSe 2 , and 2.18 eV in Na 0.1 K 0.9 AsS 2 . The Na 1-x K x AsSe 2 (x = 0.8, 0.65) compounds melt congruently at approximately 316 °C. Wavelength-dependent second harmonic generation (SHG) measurements on powder samples of Na 1-x K x AsSe 2 (x = 0.8, 0.65, 0.5) and Na 0.1 K 0.9 AsS 2 suggest that Na 0.2 K 0.8 AsSe 2 and Na 0.1 K 0.9 AsS 2 have the highest SHG response and exhibit significantly higher laser-induced damage thresholds (LIDTs). Theoretical SHG calculations on Na 0.5 K 0.5 AsSe 2 confirm its SHG response with the highest value of d 33 = 22.5 pm/V χ 333 (2) = 45.0 pm/V). The effective nonlinearity for a randomly oriented powder is calculated to be d eff = 18.9 pm/V χ eff (2) = 37.8 pm/V), which is consistent with the experimentally obtained value of d eff = 16.5 pm/V χ eff (2) = 33.0 pm/V). Three-photon absorption is the dominant mechanism for the optical breakdown of the compounds under intense excitation at 1580 nm, with Na 0.2 K 0.8 AsSe 2 exhibiting the highest stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Lithium thiostannate spinels: air-stable cubic semiconductors.

Lithium chalcogenide materials have been studied less than other alkali metal analogs and are of interest as ion conductors and semiconductors capable of thermal neutron detection. Herein, we describe the structural, thermal, magnetic, electronic, and ionic properties of a new family of cubic lithium thiospinels Li2MSn3S8 (M = Mg, Fe, Mn, Ni, Co) and Li1.66CuSn3.33S8. All compounds crystallize in the Fd (3) over barm space group and exhibit site occupancy disorder with Sn and M on the octahedral site for M = Mg, Fe, Mn, Ni, Co. The Li1.66CuSn3.33S8 compound also exhibits occupancy disorder on the tetrahedral sites between Li and Cu, as well as on the octahedral sites between Li and Sn. We demonstrate the ability to tune the physical properties of the compounds by changing their composition. By tuning the identity of the transition metal in the structure, the optical band gaps can vary between 0.91(2) and 2.19(2) eV, and electrical resistivities between 2.8 x 10(3) Omega-cm and 2.2 x 10(7)Omega-cm can be achieved. Density functional theory calculations for Li2MgSn3S8 and Li1.66CuSn3.33S8 suggest that both materials have indirect band gaps and significantly dispersive conduction bands. A bandwidth dispersion of 0.75 and 0.70 eV along the Gamma -> M direction in the conduction band are predicted for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively, with an electron effective mass of 0.49 and 0.55 m(e) at the Gamma point. The hole effective mass in the valence band is calculated to be 1.25 me at the M point and 0.75 me at the L point for Li2MgSn3S8 and Li1.66CuSn3.33S8, respectively. The ionic/electronic conductivity of each compound was determined using AC electrochemical impedance spectroscopy.

Quintero, Michael A.↗
DOE OSTI2020

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls

Abstract We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s 2 states and decrease the energy of the light hole valence band. This electronic structure modification increases the density‐of‐states effective mass, and strongly enhances the thermoelectric performance. Moreover, the Ag‐rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZT avg of around 0.86 over 400–923 K.

Luo, Zhong‐Zhen↗
DOE OSTI2020

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls

We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s2 states and decrease the energy of the light hole valence band. This electronic structure modification increases the density-of-states effective mass, and strongly enhances the thermoelectric performance. Furthermore, the Ag-rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZT avg of around 0.86 over 400–923 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Ultralow thermal conductivity in diamondoid lattices: high thermoelectric performance in chalcopyrite Cu 0.8+y Ag 0.2 In 1–y Te 2

Because of its unique transport properties, CuInTe 2 has been considered as a promising p-type material for thermoelectric applications. However, its diamondoid structure gives it a high intrinsic lattice thermal conductivity that greatly limits its thermoelectric performance. In this study, we demonstrate that Ag alloying gives rise to an extremely low lattice thermal conductivity of 0.47 W m –1 K –1 for Cu 0.8 Ag 0.2 InTe 2 at 850 K. Moreover, we found Cu doping significantly improves the carrier mobility while simultaneously increasing the carrier concentraton. As a result, the power factor of Cu 0.8 Ag 0.2 InTe 2 increases and a maximum ZT of ~1.6 is achieved at 850 K. Both DFT calculations and low temperature heat capacity measurements suggest a strong interaction between low frequency optical phonons and heat carrying acoustic phonons, which is derived from the weak Ag–Te bonding. Here, this strong phonon coupling decreases the Debye temperature and induces a low sound velocity.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe 3 by High-Entropy Engineering

We investigate the structural and physical properties of the AgSn m SbSe m+2 system with m = 1-20 (i.e., SnSe matrix and ~5-50% AgSbSe 2 ) from atomic, nano, and macro length scales. We find the 50:50 composition, with m = 1 (i.e., AgSnSbSe 3 ), forms a stable cation-disordered cubic rock-salt p-type semiconductor with a special multi-peak electronic valence band structure. AgSnSbSe 3 has an intrinsically low lattice thermal conductivity of ~0.47 W m -1 K -1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on Se sites creates a quinary high-entropy NaCl-type solid solution AgSnSbSe 3-x Te x with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ~0.32 W m -1 K -1 at 723 K and higher hole carrier concentration than AgSnSbSe 3 . Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe 1.5 Te 1.5 , the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ~9.54 μW cm -1 K -2 (400-773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K, and a high average ZT of ~1.0 over a wide temperature range of 400-773 K in AgSnSbSe 1.5 Te 1.5 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

All-Inorganic Halide Perovskites as Potential Thermoelectric Materials: Dynamic Cation off-Centering Induces Ultralow Thermal Conductivity

Halide perovskites are anticipated to impact next generation high performance solar cells because of their extraordinary charge transport and optoelectronic properties. However, their thermal transport behavior has received limited attention. In this work, we studied the thermal transport and thermoelectric properties of the CsSnBr 3–x I x perovskites. We find a strong correlation between lattice dynamics and an ultralow thermal conductivity for series CsSnBr 3–x I x reaching 0.32 Wm –1 K –1 at 550 K. The CsSnBr 3–x I x also possess a decent Seebeck coefficient and controllable electrical transport properties. The crystallography data and theoretical calculations suggest the Cs atom deviates from its ideal cuboctahedral geometry imposed by the perovskite cage and behaves as a heavy atom rattling oscillator. This off-center tendency of Cs, together with the distortion of SnX 6 (X = Br or I) octahedra, produces a highly dynamic and disordered structure in CsSnBr 3–x I x , which gives rise to a very low Debye temperature and phonon velocity. Moreover, the low temperature heat capacity data suggests strong coupling between the low frequency optical phonons and heat carrying acoustical phonons. In conclusion, this induces strong phonon resonance scattering that induces the ultralow lattice thermal conductivity of CsSnBr 3–x I x .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Ultralow Thermal Conductivity and Thermoelectric Properties of Rb 2 Bi 8 Se 13

Complex bismuth chalcogenides are narrow band gap semiconductors with intrinsic low thermal conductivity, which exhibit high potential as highly efficient thermoelectric materials. Here, we assess the basic thermoelectric properties of polycrystalline Rb 2 Bi 8 Se 13 in the temperature range 300-823 K as well as performance-optimizing strategies. We find that the as-made bulk samples are single phase with the monoclinic crystal structure (P2 1 /m) and crystallize in layer morphology. The pristine sample exhibits an exceedingly low lattice thermal conductivity of 0.6- 0.46 W·m -1 ·K -1 at 300-823 K, which derives from strong lattice anharmonicity, large Grüneisen parameters, and low phonon velocities induced by the complex crystal structure with heavy atom Bi and a large unit cell. Here, the Cl doping successfully enhances the carrier concentration in Rb 2 Bi 8 Se 13 with a negligible impact on the electronic band structure, displaying common doping behaviors. Se vacancy, on the contrary, leads to n-type doping and enhances the effective mass and power factors more significantly. Consequently, a maximum ZT of ~0.75 at 823 K for the 0.3% Se-vacancy-doped sample is obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Crystal structure and luminescence properties of lead-free metal halides (C 6 H 5 CH 2 NH 3 ) 3 MBr 6 (M = Bi and Sb)

Organic–inorganic hybrid metal halides have received extensive attention owing to their versatile structures and optoelectronic properties. Herein, we report two lead-free metal halides, (PMA) 3 BiBr 6 and (PMA) 3 SbBr 6 [PMA + : (C 6 H 5 CH 2 NH 3 ) + , as the abbreviation of phenylmethylammonium], which possess iso-structural zero-dimensional structures and crystallize in the monoclinic space group P2 1 /c. (PMA) 3 BiBr 6 and (PMA) 3 SbBr 6 exhibit optical band gaps of ~3.50 and 3.40 eV, respectively, and density functional theory calculations reveal their indirect bandgap behaviors. Upon 350 and 425 nm excitation, (PMA) 3 BiBr 6 and (PMA) 3 SbBr 6 exhibit broadband emission peaking at 510 nm and 625 nm with wide full-widths at half-maximum of ~153 and 175 nm, respectively. The emission mechanism of the metal halides is attributed to self-trapped exciton emission. The relationship between the crystal structure and luminescence intensity is also discussed. Lastly, both metal halides have high decomposition temperatures and are stable for long-term storage under ambient conditions, demonstrating their potential for optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗