Engineering topics

Hak S. Kim

Publications and source records attributed to Hak S. Kim.

5 records

NASA NTRS2023

PE99155 Point-Of-Load Buck Regulator Total Ionizing Dose Test Report

Teledyne’s PE99155 point-of-load buck regulator was tested to evaluate an applicationspecific question about the start-up behavior of the device. This test determined if accumulated total ionizing dose (TID) affected any start-up voltage transient characteristics. Testing was based on pass/fail criterial for the magnitude of the output voltage to ensure the safety of downstream electronics. Two sets of radiation tests were performed. The first group of PE99155s used a high dose rate (HDR) irradiation to 25 krad(Si). A second group of PE99155s used high dose rate irradiation to 30 krad(Si).

TID↗

NASA NTRS2023

Qorvo's NBB-400 Cascadable Broadband GaAs MMIC Amplifier Single Event Effects Test Report

This study is to determine the heavy ion induced single event effect (SEE) susceptibility of the Qorvo’s NBB-400 cascadable broadband GaAs amplifier DC to 8GHz.

amplifier↗

NASA NTRS2023

MAX1340 12-Bit, Multichannel ADCs/DACs Single-Event Effects Characterization Test Report Using Heavy Ions

This study is to characterize the destructive single event latchup (SEL) susceptibility of the MAX1340 analog/digital converter (ADC) or digital/analog converter (DAC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron.

ADC↗

NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

NASA NTRSDate not supplied

Space Radiation Effects on SiC Power Device Reliability

Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.

diode↗