Engineering topics
Publications and source records attributed to Haddad, G. I..
Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.
GaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.
Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band frequencies (75 mW, 3.5 percent at 111.1 GHz and 20 mW, 1.4 percent at 120.6 GHz) and from GaAs TUNNETT diodes at W-band frequencies (26 mW, 1.6 percent at 87.2 GHz and 32 mW, 2.6 percent at 93.5 GHz). These results indicate that IMPATT, MITATT and TUNNETT diodes have the highest potential of delivering significant amounts of power at Terahertz frequencies. As shown recently, the noise performance of GaAs W-band IMPATT diodes can compete with that of Gunn devices. Since TUNNETT diodes take advantage of the quieter tunnel injection, they are expected to be especially suited for low-noise local oscillators. This paper will focus on the two different design principles for IMPATT and TUNNETT diodes, the material parameters involved in the design and some aspects of the present device technology. Single-drift flat-profile GaAs D-band IMPATT diodes had oscillations up to 129 GHz with 9 mW, 0.9 percent at 128.4 GHz. Single-drift GaAs TUNNETT diodes had oscillations up to 112.5 GHz with 16 mW and output power levels up to 33 mW and efficiencies up to 3.4 percent around 102 GHz. These results are the best reported so far from GaAs IMPATT and TUNNETT diodes.
The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.
The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.
The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors.
The potential and capabilities of tunnel transit-time (TUNNETT) devices for power generation in the 100-1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first-order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.
An overview is given of planar doped barrier (PDB) devices for subharmonic mixer applications. A simplified description is given of PDB characteristics along with a more complete numerical analysis of the current versus voltage characteristics of typical structures. The analysis points out the tradeoffs between the device structure and the resulting characteristics that are important for mixer performance. Preliminary low-frequency characterization results are given for the device structures, and a computer analysis of subharmonic mixer parameters and performance is presented.
The current-voltage characteristics of graded Al(x)Ga(1-x)As heterojunction barriers were investigated using a self-consistent ensemble Monte Carlo method. Results are presented for barriers with two doping levels (10 to the 15th/cu cm and 10 to the 17th/cu cm) and two barrier heights (100 and 265 meV). It was found that the lower barrier structure exhibited little rectification at room temperature at both doping levels, while the higher barrier exhibited considerable rectification. The structures with the lower doping value exhibited a smaller current in both forward and reverse regions, due to space-charge effect. The results of studies of the energy and momentum distribution functions along the barrier indicate that the assumption of drifted Maxwellian distribution used in energy-momentum models is not justified for Gamma valley electrons.
Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.
A lattice-matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter-wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and frequency. A tangential signal sensitivity of -37 dBm (1 MHz amplifier bandwidth) with a corresponding video resistance of 350 ohms at 40 GHz has been measured. These results appear to be the first millimeter-wave tangential signal sensitivity and video resistance results for a resonant tunnelling diode.
Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.
A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-
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A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The agreement between the predicted I-V characteristics of diodes with both tunneling and avalanche processes and the measured ones indicates the soundness of the formulation presented.
Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.
Cavity perturbation techniques offer a very sensitive and highly versatile means for studying the complex microwave conductivity of a bulk material. A knowledge of the cavity coupling factor in the absence of perturbation, together with the change in the reflected power and the cavity resonance frequency shift, are adequate for the determination of the material properties. This eliminates the need to determine the Q-factor change with perturbation which may lead to appreciable error, especially in the presence of mismatch loss. The measurement accuracy can also be improved by a proper choice of the cavity coupling factor prior to the perturbation.
Description of a high-purity n-type indium antimonide sample mounted in a reentrant cavity, cooled to 4.2 K, and operated as a millimeter-wave detector. The scheme utilizes a down-conversion process, and free-carrier absorption is the mechanism responsible for the detection process. Power applied at the millimeter-wave frequency causes a change in the material conductivity, which in turn causes a change in the X-band power absorption. Cavity perturbation techniques are used to analyze the scheme. The detector was operated successfully at frequencies between 35 and 150 GHz with no long-wavelength or short-wavelength cutoff observed. The scheme offers a fast, highly sensitive, and rugged detector with low conversion loss.