Engineering topics

Gupta, A.

Publications and source records attributed to Gupta, A..

93 records · Page 6

NASA NTRS1977

Electrical, magnetic, and optical properties of the tetrathiafulvalene /TTF/ pseudohalides, /TTF/12/SCN/7 and /TTF/12/SeCN/7

The electrical, magnetic, and optical properties of charge-transfer salts containing tetrathiafulvalene (TTF) and the pseudohalides, thiocyanate (SCN) and selenocyanate (SeCN), have been investigated. These salts are quasi-one-dimensional compounds containing cation radicals only, in contrast to a cation-radical-anion-radical system, such as tetrathiafulvalene tetracyanoquinodimethane (TTF) (TCNQ). Measurements of electrical conductivity, thermoelectric power, and optical reflectivity of single crystals of the nonstoichiometric salts (TTF)12(SCN)7 and (TTF)12(SeCN)7 show metal-like characteristics above 200 K (high-temperature region). The conductivities at room temperature are approximately 750 mho/cm comparable to those found in (TTF) (TCNQ), and increase with decreasing temperature down to approximately 200 K. The thermoelectric power at room temperature is small and positive (approximately 9 microvolts/deg K), and decreases linearly with decreasing temperature in this region (as expected for metal-like hole conduction along the TTF chains). The ESR intensity, however, decreases with decreasing temperature above 200 K. At 170 K a metal-nonmetal transition occurs, and the transport and magnetic properties below this temperature are characteristic of a semiconducting state.

Somoano, R. B.↗

NASA NTRS1975

The electrical and magnetic properties of /TTF//I/-sub 0.71

The synthesis and transport properties of the salts (TTF) (iodine)-sub x have been investigated. These salts are quasi-one-dimensional compounds containing cation radicals only, in contrast to the cation radical-anion radical systems such as (TTF)(TCNQ). The phase diagram of (TTF)(I)-sub x is discussed, and found to consist of two nonconducting, stoichiometric phases, x = 2.0 and 3.0, and two conducting, nonstoichiometric phases, x = 0.71 and 2.3. The transport properties of (TTF)(I)-sub 0.71 are discussed in detail. This phase is highly conducting, undergoes a sharp transition to a less conducting state at 210 K, and exhibits an unusual hysteresis in some of the transport properties upon thermal cycling. The nature of the high-temperature ground state is examined.

Somoano, R. B.↗

NASA NTRS1973

Use of Sirtl etch for silicon-slice evaluation.

An investigation was conducted to explore the possibility of using Sirtl etch as a nondestructive evaluation step for categorizing silicon wafers before device fabrication is begun. It is known that chromium is deposited as a residue during the chemical reaction associated with etching silicon in Sirtl etch. There has been concern that the use of Sirtl etch could result in the diffusion of chromium into the silicon slice during subsequent high-temperature processing steps. The investigation revealed, however, that residual chromium resides only on the surface of the slice and can easily be removed.

Porter, W. A.↗