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Gunapala, Sarath D.

Publications and source records attributed to Gunapala, Sarath D..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of focal plane arrays based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-wavelength infrared focal plane array utilizing CBIRD design. An 11.5 micrometer cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 micrometer cutoff focal plane array are also presented. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

heterostructure↗
NASA NTRS2011

Photoluminescence Study of Long Wavelength Superlattice Infrared Detectors

In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the trend remained unchanged in the temperature range 10 - 77 K. This relation between the PL intensity and the peak wavelength can be favorably used for comparison of the optical quality of samples with different PL peak wavelengths. A strong increase of the width of the PL spectrum in the studied temperature interval was observed, which was attributed to thermal broadening.

superlattice↗
NASA NTRS2011

n-B-pi-p Superlattice Infrared Detector

A specially designed barrier (B) is inserted at the n-pi junction [where most GR (generation-recombination) processes take place] in the standard n-pi-p structure to substantially reduce generation-recombination dark currents. The resulting n-Bpi- p structure also has reduced tunneling dark currents, thereby solving some of the limitations to which current type II strained layer superlattice infrared detectors are prone. This innovation is compatible with common read-out integrated circuits (ROICs).

Ting, David Z.↗
NASA NTRS2011

HyTES: Thermal Imaging Spectrometer Development

The Jet Propulsion Laboratory has developed the Hyperspectral Thermal Emission Spectrometer (HyTES). It is an airborne pushbroom imaging spectrometer based on the Dyson optical configuration. First low altitude test flights are scheduled for later this year. HyTES uses a compact 7.5-12 micrometer m hyperspectral grating spectrometer in combination with a Quantum Well Infrared Photodetector (QWIP) and grating based spectrometer. The Dyson design allows for a very compact and optically fast system (F/1.6). Cooling requirements are minimized due to the single monolithic prism-like grating design. The configuration has the potential to be the optimal science-grade imaging spectroscopy solution for high altitude, lighter-than-air (HAA, LTA) vehicles and unmanned aerial vehicles (UAV) due to its small form factor and relatively low power requirements. The QWIP sensor allows for optimum spatial and spectral uniformity and provides adequate responsivity which allows for near 100mK noise equivalent temperature difference (NEDT) operation across the LWIR passband. The QWIP's repeatability and uniformity will be helpful for data integrity since currently an onboard calibrator is not planned. A calibration will be done before and after eight hour flights to gage any inconsistencies. This has been demonstrated with lab testing. Further test results show adequate NEDT, linearity as well as applicable earth science emissivity target results (Silicates, water) measured in direct sunlight.

remote sensing↗
NASA NTRS2011

High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A mid-wavelength infrared (MWIR) barrier photodetector is capable of operating at higher temperature than the prevailing MWIR detectors based on InSb. The standard high-operating-temperature barrier infrared detector (HOT-BIRD) is made with an InAsSb infrared absorber that is lattice-matched to a GaSb substrate, and has a cutoff wavelength of approximately 4 microns. To increase the versatility and utility of the HOT-BIRD, it is implemented with IR absorber materials with customizable cutoff wavelengths. The HOT-BIRD can be built with the quaternary alloy GaInAsSb as the absorber, GaAlSbAs as the barrier, on a lattice-matching GaSb substrate. The cutoff wavelength of the GaInAsSb can be tailored by adjusting the alloy composition. To build a HOT-BIRD requires a matching pair of absorber and barrier materials with the following properties: (1) their valence band edges must be approximately the same to allow unimpeded hole flow, while their conduction band edges should have a large difference to form an electron barrier; and (2) the absorber and the barrier must be respectively lattice-matched and closely lattice-matched to the substrate to ensure high material quality and low defect density. To make a HOT-BIRD with cutoff wavelength shorter than 4 microns, a GaInAsSb quaternary alloy was used as the absorber, and a matching GaAlSbAs quaternary alloy as the barrier. By changing the alloy composition, the band gap of the quaternary alloy absorber can be continuously adjusted with cutoff wavelength ranging from 4 microns down to the short wavelength infrared (SWIR). By carefully choosing the alloy composition of the barrier, a HOT-BIRD structure can be formed. With this method, a HOT-BIRD can be made with continuously tailorable cutoff wavelengths from 4 microns down to the SWIR. The HOT-BIRD detector technology is suitable for making very-large-format MWIR/SWIR focal plane arrays that can be operated by passive cooling from low Earth orbit. High-operating temperature infrared with reduced cooling requirement would benefit space missions in reduction of size, weight, and power, and an increase in mission lifetime.

Ting, David Z.↗
NASA NTRS2011

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of focal plane arrays based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-waveleng thinfrared focal plane array utilizing CBIRD design. An 11.5 micrometer cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 micrometer cutoff focal plane array are also presented. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

infrared↗
NASA NTRS2010

Submonolayer Quantum Dot Infrared Photodetector

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Ting, David Z.↗
NASA NTRS2010

Optical Studies on Antimonide Superlattice Infrared Detector Material

In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.

heterostructure↗
NASA NTRS2010

nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer

An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

Gunapala, Sarath D.↗
NASA NTRS2009

Ultra compact spectrometer apparatus and method using photonic crystals

The present invention is directed to methods of photonic crystal formation, and to methods and apparatus for using such photonic crystals, particularly in conjunction with detector arrays. Photonic crystal parameters and detector array parameters are compared to optimize the selection and orientation of a photonic crystal shape. A photonic crystal is operatively positioned relative to a plurality of light sensors. The light sensors can be separated by a pitch distance and positioned within one half of the pitch distance of an exit surface of the photonic crystals.

Ting, David Z.↗
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
NASA NTRS2009

Thermal Infrared Spectral Imager for Airborne Science Applications

An airborne thermal hyperspectral imager is under development which utilizes the compact Dyson optical configuration and quantum well infrared photo detector (QWIP) focal plane array. The Dyson configuration uses a single monolithic prism-like grating design which allows for a high throughput instrument (F/1.6) with minimal ghosting, stray-light and large swath width. The configuration has the potential to be the optimal imaging spectroscopy solution for lighter-than-air (LTA) vehicles and unmanned aerial vehicles (UAV) due to its small form factor and relatively low power requirements. The planned instrument specifications are discussed as well as design trade-offs. Calibration testing results (noise equivalent temperature difference, spectral linearity and spectral bandwidth) and laboratory emissivity plots from samples are shown using an operational testbed unit which has similar specifications as the final airborne system. Field testing of the testbed unit was performed to acquire plots of apparent emissivity for various known standard minerals (such as quartz). A comparison is made using data from the ASTER spectral library.

QWIP↗
NASA NTRS2009

nBn Infrared Detector Containing Graded Absorption Layer

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Gunapala, Sarath D.↗
NASA NTRS2008

Long-Wave Infrared Dyson Spectrometer

Preliminary results are presented for an ultra compact long-wave infrared slit spectrometer based on the dyson concentric design. The dyson spectrometer has been integrated in a dewar environment with a quantum well infrared photodetecor (QWIP), concave electron beam fabricated diffraction grating and ultra precision slit. The entire system is cooled to cryogenic temperatures to maximize signal to noise ratio performance, hence eliminating thermal signal from transmissive elements and internal stray light. All of this is done while maintaining QWIP thermal control. A general description is given of the spectrometer, alignment technique and predicated performance. The spectrometer has been designed for optimal performance with respect to smile and keystone distortion. A spectral calibration is performed with NIST traceable targets. A 2-point non-uniformity correction is performed with a precision blackbody source to provide radiometric accuracy. Preliminary laboratory results show excellent agreement with modeled noise equivalent delta temperature and detector linearity over a broad temperature range.

imaging↗
NASA NTRS2007

Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.

quantum cascade detector↗
NASA NTRS2007

640 x 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 micrometers, with peak detectivity reaching approximately 1 X 10(exp 10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.

quantum dots (QDs)↗
NASA NTRS2006

Progress in MBE grown type-II superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.

molecular beam epitaxy (MBE)↗