Engineering topics
Publications and source records attributed to Gunapala, Sarath D..
We explore long wavelength InAs/InAsSb superlattice complementary barrier infrared detectors that contain p-type absorber layers for quantum efficiency enhancement. We also discuss type-II superlattice infrared detector technology for NASA Earth Science applications, including LWIR FPAs for land imaging, and MWIR FPAs for CubeSat hyperspectral imaging.
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in recent years as a viable infrared detector material. In particular, mid-wavelength InAs/InAsSb T2SLS focal plane array (FPA) based on the nBn detector architecture exhibits good operating characteristics at 160 K, demonstrating a considerably operating temperature advantage over InSb FPAs. In the long and very long cutoff wavelengths, InAs/InAsSb T2SLS detectors with n-type absorbers are limited in their attainable quantum efficiency (QE) due to shorter hole diffusion lengths and relatively modest absorption coefficients. We have explored long and very long wavelength InAs/InAsSb T2SLS complementary barrier infrared detectors (CBIRDs) that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for QE enhancement. We also discuss recent development of the InAs/InAsSb T2SLS infrared detectors at the Jet Propulsion Laboratory for NASA Earth Science applications, including long-wavelength infrared FPAs for land imaging, and mid-wavelength infrared FPAs for CubeSat hyperspectral imaging.
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Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of.about.10.mu.m.
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Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.
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We investigated a novel approach to extend a cut -off wavelength of Sb-based nBn detectors. We incorporated a series of single InSb monolayer into InAsSb bulk that allowed to realize a digital alloy absorber with an extended cut-off wavelength of λ = 4.6 μm at T = 200 K. The cut-off wavelength extension to 4.6μm is technologically important for realization of detectors covering CO2 absorption line at 4.26μm
In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
We report our recent developments of antimonide based infrared photodetectors utilizing a complementary barrier infrared detector (CBIRD) design. The new generation of devices can operate close to zero bias with the same quantum efficiency as the initial design. 320x256 pixel long-wavelength infrared focal plane arrays utilizing optimized design have been demonstrated with 8.8 µm cutoff wavelength and noise equivalent differential temperature of 26 mK at operating temperature of 80 K for 300 K background and f/2 optics. As CBIRD detectors became valuable candidates for space-based instruments, question of their radiation tolerance became important. Here, we report our investigations of the proton irradiation effects on the photodetector performance.
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