10-16 meu broadband 640X512 GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array
This paper describes the first demonstation of broadband QWIP focal plane array.
Engineering topics
Publications and source records attributed to Gunapala, S. D..
This paper describes the first demonstation of broadband QWIP focal plane array.
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, noise equivalent differential temperature, uniformity, and operability.
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, uniformity, and operability.
The quantum well infrared photodetector is an artificially engineered semiconductor multilayer structure designed to absorb and detect infrared radiation.
QWIPs operate by photoexcitation of electrons between ground and first excited state subbands of multi-quantum wells (MQWs) which are artificially fabricated by placing thin layers of two dfferent, high-bandgap semiconductor materials alternately. The bandgap discontinuity of two materials creates quantized subbands in the potential wells associated with conduction bands.
There are many applications that require long wavelength, large, uniform, reproducible, low cost, stable, and radiation-hard infrared (IR) focal plane arrays (FPAs). For example, the absorption lines of many gas molecules, such as ozone, water, carbon monoxide, carbon dioxide, and nitrous oxide occur in the wavelength region from 3 to 18 micron. Thus, IR imaging systems that operate in the long wavelength IR (LWIR) region (6 - 18 micron) are required in many space borne applications such as monitoring the global atmospheric temperature profiles, relative humidity profiles, cloud characteristics, and the distribution of minor constituents in the atmosphere which are being planned for future NASA Earth and planetary remote sensing systems. Due to higher radiation hardness, lower 1/f noise, and larger array size the GaAs based Quantum Well Infrared Photodetector (QWIP) FPAs are very attractive for such space borne applications compared to intrinsic narrow band gap detector arrays. In this presentation we will discuss the optimization of the detector design, material growth and processing that has culminated in realization of large format long-wavelength QWIP FPAs, portable and miniature LWIR cameras, holding forth great promise for myriad applications in 6-18 micron wavelength range in science, medicine, defense and industry. In addition, we will present some system demonstrations using broadband, two-color, and high quantum efficiency long-wavelength QWIP FPAs.
An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 micron two color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micron detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micron detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this presentation we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NEAT), uniformity, and operability.
In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long wavelength QWIP cameras and 648x480 long-wavelength camera, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
Long wavelength Quantum Well Infrared Photodetector (QWIP) cameras developed at the Jet Propulsion Laboratory demonstrate the potential of GaAs/A1xGa1-xAs QWIP technology for highly sensitive, low power, low cost, and highly uniform large format FPA imaging systems.
A broad-band infrared detector, sensitive over a 10 - 16 mu m spectral range, based on GaAs/A1xGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated.
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
The performcance of this QWIP camera is reported including indoor and outdoor imaging.
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long-wavelength QWIP cameras and 648x480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.
High performance long-wavelength GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors for low background applications have been demonstrated. This is the first theoretical analysis of quantum well infrared photodetectors for low background applications and the detectivity D* of 6 x 10(exp 13) cm.square root of Hz/W has been achieved at T = 40 K with 2 x 10(exp 9) photons/cm2/sec background. In addition, this paper describes the demonstration of mid-wavelength/long-wavelength dualband quantum well infrared photodetectors and long-wavelength/very long-wavelength dualband quantum well infrared photodetectors in 4-26 micrometers wavelength region.
In recent years, many research groups in the world have demonstrated large format Quantum Well Infrared Photodetector (QWIP) focal plane arrays for various thermal imaging applications. QWIPs as opposed to conventional low bandgap infrared detectors, are limited by thermionic dark current and not tunneling currents down to 30K or less. As a result the performance of QWIPs can be substantially improved (orders of magnitude) by cooling from 70K to 30K. Cooling does not induce any nonuniformity or 1/f noise in QWIP focal plane arrays. In this paper, we discuss the development of highly uniform long- wavelength QWIPs for astronomical applications.