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Gossard, A. C.

Publications and source records attributed to Gossard, A. C..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Moiré pattern of interference dislocations in condensate of indirect excitons

Interference patterns provide direct measurement of coherent propagation of matter waves in quantum systems. Superfluidity in Bose–Einstein condensates of excitons can enable long-range ballistic exciton propagation and can lead to emerging long-scale interference patterns. Indirect excitons (IXs) are formed by electrons and holes in separated layers. The theory predicts that the reduced IX recombination enables IX superfluid propagation over macroscopic distances. Here, we present dislocation-like phase singularities in interference patterns produced by condensate of IXs. We analyze how exciton vortices and skyrmions should appear in the interference experiments and show that the observed interference dislocations are not associated with these phase defects. We show that the observed interference dislocations originate from the moiré effect in combined interference patterns of propagating condensate matter waves. The interference dislocations are formed by the IX matter waves ballistically propagating over macroscopic distances. The long-range ballistic IX propagation is the evidence for IX condensate superfluidity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Attractive and repulsive dipolar interaction in bilayers of indirect excitons

We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQWs), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The attractive dipolar interaction between IXs is realized in a two-CQW heterostructure with two IX layers in two separated CQW pairs. We found both in experimental measurements and theoretical simulations that increasing density of IXs in one layer causes a monotonic energy reduction for IXs in the other layer. We also found an in-plane shift of a cloud of IXs in one layer towards a cloud of IXs in the other layer. This behavior is qualitatively consistent with attractive dipolar interaction. In conclusion, the measured IX energy reduction and IX cloud shift are higher than the values given by the correlated liquid theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

Embedded Coplanar Strips Traveling-Wave Photomixers

The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields < 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.

Wyss, R. A.↗
NASA NTRS2001

Traveling-Wave Membrane Photomixers

Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Wyss, R. A.↗
NASA NTRS1989

Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

Law, K.-K.↗