Engineering topics
Publications and source records attributed to Gillanders, M..
GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.
High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.
This paper is a follow-up to a previous paper written following the completion of Spectrolab's LPE GaAs production facility in 1985 (Mardesich et al., 1985). Progress made since that time is discussed. Significant improvements in the manufacture of these devices, resulting in better cell performance and higher yields, are described. Pilot production cell performance data are presented, including lot distribution of efficiency, Jsc, Voc and CFF. 1-MeV electron radiation damage results are reported.
Modifications were made to the process sequence until a device capable of high performance and satisfactory processing yields could be fabricated on a production line. Pilot production resulted in a 2 x 4 cm screen printed dielectric wraparound contact solar cell with average 28 C, Air Mass Zero (AMO) conversion efficiencies of 14.2% and reasonable process yields. This high performance was obtained with two different back contact configurations, making the device acceptable for many applications.
Advanced silicon solar cells with both electrical contacts on the back side of the cell are described. These high efficiency wrap around contact solar cells (HEWACS) utilize a screen printed dielectric insulation layer to isolate the 'n' and 'p' contacts from each other. Development of a device exhibiting high AMO conversion efficiencies is addressed along with the processing of such cells to a point where cell fabrication can be carried out by production personnel under operating production line conditions.
A cell technology, producing high efficiency wrap-around contact solar cells (HEWACS), with both electrical contacts on the back and AMO conversion efficiencies of almost 15%, is presented. A flow chart indicating the baseline process sequence along with the process changes is given. Tests checking for coating delamination and contact integrity, those measuring contact strength, and thermal cycle tests, successfully demonstrated that this cell technology is ready to be moved to the pilot production stage.