Engineering topics
Publications and source records attributed to George, Thomas.
Technique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates.
The influence of growth parameters on the initial stage of heteroepitaxial growth of GaP, GaAs and AlAs on (100) Si substrates was examined. GaP and GaAs grow on Si in three-dimensional growth mode, forming well separated islands. However, such islands were observed to be contiguous in the case of AlAs growth on Si. The island density was seen to be proportional to the growth rate. GaAs and GaP exhibit very different growth behavior with increasing V/III flux ratio. Misorientation of the Si substrate does not appear to affect the island densities. Possible mechanisms for this growth behavior, based on cluster formation and migration, are discussed for the growth of these compound semiconductors on Si.