Engineering topics

Gardner, Geoffrey C.

Publications and source records attributed to Gardner, Geoffrey C..

5 records

DOE OSTI2022

Entropy Measurement of a Strongly Coupled Quantum Dot

The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, in this work, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with a reservoir. The experimental results match closely to numerical renormalization group (NRG) calculations for small and intermediate coupling. For the largest couplings investigated in this Letter, NRG calculations predict a suppression of spin entropy at the charge transition due to the formation of a Kondo singlet, but that suppression is not observed in the experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

A Robust Protocol for Entropy Measurement in Mesoscopic Circuits

Previous measurements utilizing Maxwell relations to measure change in entropy, S, demonstrated remarkable accuracy in measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the quantitative determination of entropy independent of scale factors in the measurement itself but at the cost of limiting the applicability of the approach to simple systems. To measure the entropy of more exotic mesoscopic systems, a more flexible analysis technique may be employed; however, doing so requires a precise calibration of the measurement. Here, we give details on the necessary improvements made to the original experimental approach and highlight some of the common challenges (along with strategies to overcome them) that other groups may face when attempting this type of measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Direct observation of anyonic braiding statistics

Anyons are quasiparticles that, unlike fermions and bosons, show fractional statistics when two of them are exchanged. Here, we report experimental observation of anyonic braiding statisticsfor the ν 1/3 fractional quantum Hall state using a device that is equivalent to a Fabry-Perot interferometer. Strong Aharonov-Bohm interference of the edge mode is punctuated by discrete phase slips that indicate an anyonic phase of $\theta$ anyon = 2π/3. Here, our results are consistent with a recent theory for an interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles, indicating that we have observed anyonic braiding.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Anticorrelation of compressibility and resistivity in a microwave-irradiated two-dimensional electron system

Here, we report our direct study of the compressibility on an ultrahigh mobility two-dimensional electron system ( μ e ~ 1 × 10 7 cm 2 /V s) in GaAs/AlGaAs quantum wells under microwave irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave-induced resistance oscillations, yet, the trend is opposite with respect to the compressibility of equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the nonequilibrium system under microwaves. Moreover, the quantum capacitance indication for a multiphoton process around j = 1 / 2 is detected under an intensive microwave below 30 GHz.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

We present a detailed study of 7-nm thick Al layers epitaxially grown on In x Al 1-x As or Al 1-x Ga x Sb y As 1-y (0 0 1) semiconductors using high-resolution transmission electron microscopy (HRTEM) and synchrotron X-ray diffraction (XRD). These techniques provide high spatial and high reciprocal space resolution information about Al lattice orientations and interfacial structure, highlighting the existence of a strong correlation between the surface lattice parameter of the semiconductor and the normal orientation of the aluminum film. The normal orientation of Al layers is found to be [1 1 1] when the in-plane semiconductor surface lattice parameter, a S , is smaller than 5.98 Å, and is [1 1 0] when aS is larger than this value. In the transition between these lattice parameters where one orientation is preferred, both orientations may be observed. Concomitant with the change in normal orientation is an inversion in the strain state of the aluminum film. When the normal orientation is [1 1 1], the Al film is compressively strained; while for [1 1 0] normal orientations, the Al in-plane strain is tensile. An energy balance model, accounting for surface, interfacial, side-face, and strain energy, and the registry of lattice planes across the semiconductor/aluminum interface provide explanations for the observed normal orientation and strain inversion.

36 MATERIALS SCIENCE↗